FMMT591 Search Results

Contextual Info: FMMT591 General Purpose Transistor PNP Silicon P b Lead Pb -Free COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -60 V Collector-Emitter Breakdown Voltage V(BR)CBO -80 V Emitter-Base Breakdown Voltage

150M

Abstract: FMMT591CSM
Contextual Info: FMMT591CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT591 Features • • Power dissipation: PCM=0.5W Tamb=25℃ Collector current: Ic=1A PNP Plastic-Encapsulate

Contextual Info: MCC TM Micro Commercial Components Features • • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT591 Lead Free Finish/RoHS Compliant "P" Suffix designates Pin Configuration

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23

design ideas

Abstract: FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE
Contextual Info: A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol

Contextual Info: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement

Contextual Info: FMMT591 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 1 PCM : 0.5 W Collector Current ICM : -1 A Collector-base voltage

91A SOT23

Abstract: FMMT591A FMMT491A DSA003699 91A PNP
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage

FMMT491

Abstract: FMMT591
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM FMMT591 POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES , ! \ I LOW Equivalent on resistance RcE ~a =355mfl at 1A* E c COMPLEMENTARY PARTMARKING TYPE- FMMT491 DETAIL - 591 4BSOLUTE MAXIMUM RATINGS. VALUE SYMBOL PARAMETER Collector-Base

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -1 A ICM: Collector-base voltage -80 V V(BR)CBO:

150M

Abstract: FMMT591DCSM
Contextual Info: FMMT591DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

91A SOT23

Abstract: design ideas FMMT591 FMMT491A TS16949
Contextual Info: A Product Line of Diodes Incorporated FMMT591 SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol VCBO

Contextual Info: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction

Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 2.4 1.3 W (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range 0.95

Contextual Info: A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -40V • • IC = -1A High Continuous Current • • ICM = -2A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound

smd transistor 591

Abstract: 591 smd transistor Transistor smd marking 1a sot-23 TRANSISTOR SMD 1a 9 FMMT591
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 2.4 1.3 W (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V

FMMT591TA

Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
Contextual Info: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction

Contextual Info: A Product Line of Diodes Incorporated FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -60V   IC = -1A High Continuous Collector Current   ICM = -2A Peak Pulse Current   RSAT = 295mΩ for a Low Equivalent On-Resistance

100MHZ

Abstract: FMMT591
Contextual Info: RECTRON FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range

power ic 5v 1A

Contextual Info: FMMT591 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage

Contextual Info: Not Recommended for New Design Please Use FMMT591 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ✪ ISSUE 4 – JUNE 1996 COMPLEMENTARY TYPE – BSR40 PARTMARKING DETAIL – BR1 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage