BSR30 Search Results

marking BR4

Abstract: BSR30 BSR31 BSR33 marking BR2 BR2 marking
Contextual Info: Transistors SMD Type PNP Medium Power Transistors BSR30,BSR31,BSR33 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 Low voltage max. 80 V .

Contextual Info: • bbS3^31 00353^1 DSD H A P X N AUER PHILIPS/DISCRETE BSR30 to 33 L7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

Contextual Info: Not Recommended for New Design Please Use FMMT491 BSR40 BSR42 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPES – BSR40 – BSR30 BSR42 – BSR32 PARTMARKING DETAIL – C BSR40 – AR1 BSR42 – AR3 E C B

DIODE D29 -08

Contextual Info: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated

MARKING 93 SOT89

Abstract: BSR33 BSR30 BSR31 BSR40 BSR41 BSR43 marking BR4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product data sheet Supersedes data of 1999 Apr 26 2004 Dec 13 NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ISSUE* -JUNE 1996_ O_ C O M PLEM EN TA R Y T Y P E - BSR40 PARTM ARKIN G D E T A IL - BR1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage

SOT89 transistor marking with lb 135

Abstract: SOT89 MARKING CODE B2 MARKING 93 SOT89 MARKING BL SOT89 marking BR4 sot89 marking 93 BR2 SOT89 BSR31 BSR33 BSR41
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31 ; BSR33 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and general industrial applications

2SA1283D

Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index

339 marking code transistor

Abstract: BSR30 BSR31 BSR32 BSR33 BSR40 BSR41 BSR42 BSR43 marking 81 SOT89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR30; BSR31; BSR32; BSR33 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 01 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31 ; BSR33 FEATURES PINNING • High current max. 1 A

Contextual Info: Transistors SMD Type Product specification BSR30,BSR31,BSR33 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 Low voltage max. 80 V .

DIODE D29 -08

Contextual Info: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23

MARKING 93 SOT89

Abstract: BSR30 BSR31 BSR33 BSR40 BSR41 BSR43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product specification Supersedes data of 1999 Apr 26 2004 Dec 13 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33

Contextual Info: Not Recommended for New Design Please Use FMMT591 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ✪ ISSUE 4 – JUNE 1996 COMPLEMENTARY TYPE – BSR40 PARTMARKING DETAIL – BR1 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 CO M PLEM ENTARY TYPES O BSR 40 - BSR30 B S R 4 2 - BSR32 PARTMARKING DETAIL • B SR 4 0 -A R 1 BSR42 -A R 3 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L BSR40 BSR 42 U N IT

SOT89 marking cec

Abstract: BRS32 marking BR2 BSR32 marking BR4
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors FEATURES BSR30; BSR31; BSR32; BSR33 PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and general industrial applications

BSR302N

Abstract: GPS09473 HLG09474 L6327 GS1660
Contextual Info: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated

GS1660

Abstract: BSR302N GPS09473 HLG09474 L6327
Contextual Info: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product data sheet Supersedes data of 1999 Apr 26 2004 Dec 13 NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 PINNING

FMMT551

Abstract: BSR30 BSR40
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ✪ ISSUE 4 – JUNE 1996 COMPLEMENTARY TYPE – BSR40 PARTMARKING DETAIL – BR1 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage

BSR33

Abstract: BP317 BSR30 BSR31 BSR40 BSR41 BSR43 marking BR2 sot89 marking 93
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product specification Supersedes data of 1997 Apr 01 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33

Contextual Info: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated

Contextual Info: BSR40 BSR42 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 3 - FE B R U A R Y 1996 O_ C O M PLEM EN TA R Y T Y P E S - BSR40 - BSR30 BSR42 - BSR32 PARTM ARKIN G D E T A IL - BSR40 - A R I B S R 4 2 -A R 3 ABSOLUTE MAXIMUM RATINGS.

BSR30

Abstract: BSR31 BSR32 BSR33 BR4 m
Contextual Info: • □ □ 2 5 5 CU DSD H A P X N AMER P H I L I PS /D ISC RE TE BSR30 to 33 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in m in ia tu re plastic envelopes intended fo r a p p lica tio n in th ic k and th in -film circuits. T hey are intended fo r use in te le p h o n y and general in d ustrial applications.