10 35 DIODE Search Results

"tape reader"

Abstract: ZM111 ZM100 ZM110 ZMA7130 ZMA760 ZMA9130 ZMA960 ZME60 ZMX130
Contextual Info: OPTO-ELECTRONICS Photo Transistors/Diodes M axim um Ratings Type No. VcBO volts v CEO (volts) v EBO (voltsï •c m (amp.) (rnW) 35 35 35 35 35 35 50 10 10 10 6 0 *2 5 0 -2 5 0 -2 5 0 -2 5 200 200 200 200 ZM 100 ZM 110 ZM111 ZM X130 P to t Characteristics

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

418B-04

Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35

2N2222B

Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A

Contextual Info: Fairchild Kits available through Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes Description PKG parts per kit 1N5229BTR 4.3V 500MW 5% ZENER, DO35 DO-35 10 1N5230BTR 4.7V 500MW 5% ZENER, DO35 DO-35 10 1N5231BTR 5.1V 500MW 5% ZENER, DO35 DO-35

iss86

Abstract: 1SS119
Contextual Info: DIODE SERIES •î i t | ' > a 7 K Schottky barrier diodes for detectors & mixers Ratings Application Package Code DO-35 Detector switching Type No. isstoe 1SS108 1SS196 10 30 max 4.5 30 15 30 3 4.5 1.0 15 3 35 ‘ 35 ‘ 30 15 15 30 15 [0.6] [0.7] 1.0 [10]

D417

Abstract: rsm ah
Contextual Info: □IXYS DS8 10-0035/45A Power Schottky Rectifier I fav V rrm VF Preliminary Data 10 A 35 - 45 V 0.58 V TO-220 AC v RSM Type V rrm V V 35 45 35 45 n C TAB DSS 10-0035A DSS 10-0045A A = Anode, C = Cathode , TAB = Cathode Symbol Maximum Ratings Test Conditions

Contextual Info: DSS 10-0035/45A Power Schottky Rectifier U av V rrm VF 10 A 35 • 45 V 0.58 V Preliminary Data v RSM V, V V 35 45 35 45 * f TT\ Type 9 Vsz J ^ DSS 10-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings

SCHOTTKY bys 50

Contextual Info: h LGSAGrlBB SCHOTTKY DIODES Type 1 1 1 T V v at 1 F RRM FAV FSM F R jmax V (A) (A) (V) (A) (mA) (C) BYR 10-25 BYR 10-35 BYR 10-45 BYS 10-40 BYS 10-50 BYS 10-60 BYS 10-70 BYS 10-80 BYS 10-90 BYS 10-100 BYR 16-25 BYR 16-35 BYR 16-45 BYS 16-40 BYS 16-50 BYS 16-60

byp 660

Contextual Info: Diotec BYP 70/35 . BYP 79/35 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Hochtemperaturdioden Nominal current – Nennstrom Ø 12.7 35 A Ø 10 Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.3 50.400 V

qm431

Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
Contextual Info: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N

diode 824

Contextual Info: DSS 10-0035/45A IFAV = 10 A VRRM = 35 - 45 V VF = 0.58 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 35 45 35 45 TO-220 AC Type A C C A DSS 10-0035A DSS 10-0045A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions IFRMS IFAV TC = 160°C; rectangular, d = 0.5

C5VI

Abstract: D0214 zener c5vi
Contextual Info: Temic Semiconductors Zener Diodes continued Part Number Vzaem- 1Jjgf-: jfef ; ¥25- . mA V • V «ad' ectric#! Characteristics :' r *SÉK y $ ti‘ a m <25 <25 <20 < 15 < 15 < 15 < 10 <5 <4 <3.5 <6 <6 <8 < 10 < 10 < 12 <20 <20 <25 <30 <30 <30 <35 <35

MS7351

Abstract: MS7451 MS7311 MS7231 MS7531 MS7221 MS7121 MS7241 MS745-1 MS*8211
Contextual Info: 64 SCHOTTKY DIODES 4 3 PART NUMBER C j. pF Ip (ma) V BR ,V ) 5 Rs (ß ) ULTRA f a s t s w it c h in g d io d e s MS7111 MS7121 MS7131 5 5 5 10 20 35 1.0 1.0 1.0 MS7141 MS7151 MS7211 5 5 10 50 100 10 1.0 1.0 1.0 20 MS7221 MS7231 MS7241 10 10 10 20 35 50 1.0

BA216

Abstract: BA164 1S44 BA217 1N457JAN 1N458JAN 1N459JAN 1N461A BA130 BA218
Contextual Info: FAIRCHILD DIODES DIODES GENERAL PURPOSE DIODES BY DESCENDING BV (Cont’d) GLASS PACKAGE Item DEVICE NO. BV V Min *R nA Max @ vF Vr V V Max If mA @ c trr PF ns Max Max Package No. 1 BA218 50 50 25 1.0 10 5.0 — ' DO-35 2 1S44 50 50 10 1.15 10 6.0 — DO-35

varistor 222, 2KV

Abstract: IP20C
Contextual Info: 48 Series - Relay Interface Modules 8 - 10 - 16 A 48.31 48.52 48.61 - 1 pole, 10 A - 35 mm rail EN 50022 mounting - 2 pole, 8 A - 35 mm rail (EN 50022) mounting - 1 pole, 16 A - 35 mm rail (EN 50022) mounting - Relay interface modules for use with PLC systems, 15.5 mm wide

D-SSK 135

Contextual Info: Schottky Diode Chips Type VRRM IFAVM V A °C K/W IFSM 10 ms 45 °C A 15 20 35 135 130 1.4 1.1 350 660 10 20 200 350 DWS 17 25 25 125 1.4 330 10 80 0.43 DWS 4 DWS 14 DWS 24 DWS 34 35 / 45 10 16 25 60 157 159 148 120 2.5 2 1.5 1 140 280 550 800 0.15 0.25 0.5

c125 diode

Contextual Info: Power Schottky Rectifier •FAV V rrm VF 10 A 35 - 45 V 0.58 V Preliminary Data v RSH TO-220 AC V V V 35 45 35 45 t- C TyP e rrm Ï7 A "" DSS 1 0-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings ^FRMS

P4C422

Contextual Info: P4C422 HIGH SPEED 256 X 4 STATIC CMOS RAM FEATURES High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495 mW Max. – 10/12/15/20/25 (Commercial) – 495 mW Max. – 15/20/25/35 (Military)

ir 21015

Contextual Info: Bulletin PD-21015 rev. B 06/06 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35 - 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 10 A 35 - 45 V IFSM @ tp = 5 s sine 1050 A VF @ 10 Apk, TJ = 125°C

1N4848

Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Contextual Info: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70

ir 21015

Abstract: 10TQ 10TQ045S 40HF P460 SMD-220 PD-21015 21015
Contextual Info: Bulletin PD-21015 rev. B 06/06 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35 - 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 10 A 35 - 45 V IFSM @ tp = 5 s sine 1050 A VF @ 10 Apk, TJ = 125°C

ir 21015

Abstract: 21015
Contextual Info: Bulletin PD-21015 05/05 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics 10TQ Units IF(AV) Rectangular 10 A VRRM 35 / 45 V IFSM @ tp = 5 µs sine 1050 A VF @ 10 Apk, TJ = 125°C

ir 21015

Contextual Info: Bulletin PD-21015 rev. A 07/05 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35 - 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 10 A 35 - 45 V IFSM @ tp = 5 µs sine 1050 A VF @ 10 Apk, TJ = 125°C