10 35 DIODE Search Results

Contextual Info: n ix Y S _ Power Schottky Rectifier DSS 2x81 lFAV = 2x79 A V rrm = 3 5 - 4 5 mini BLOC, SOT-227 B Preliminary data V RSM V 35 45 35 45 w\ Type V rrm V 01 M PI 10 1 1 0n • DSS 2x81-0035A DSS 2x81 -0045A Symbol Test Conditions ^FRMS T "v j Maximum Ratings per diode

FT6187

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

P4C422

Contextual Info: P4C422 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup

22-PIN

Abstract: P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

Contextual Info: Coaxial Switch ZMSW-1111 50Ω SPST Pin Diode 10 to 2500 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power • wideband, 10 to 2500 MHz • good isolation, 35 dB typ. +20 dBm Control Current Applications

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SIS430DN

Abstract: SiS430DN-T1-GE3
Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

P4C167

Abstract: P4C167L
Contextual Info: P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Separate Data I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military) Three-State Output

FT6167

Contextual Info: FT6167/FT6167L Features ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS Full CMOS, 6T Cell Separate Data I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military) Three-State Output

Contextual Info: BA479G, BA479S www.vishay.com Vishay Semiconductors RF PIN Diodes - Single in DO-35 FEATURES • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS

Contextual Info: DB3 BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts Power: 150mW FEATURES DO-35 GLASS Small glass structure ensures high reliability VBO:26-36V version Low breakover current High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length,

1SV216

Contextual Info: 1SV216 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV216 TV VHF UHF Tuner AFC Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VR 30 V Peak reverse voltage VRM 35 (RL = 10 kΩ) V Junction temperature Tj 125 °C

marking code EA SMD

Abstract: 2501 BRIDGE SMD smd marking EA KBPC1006-W KBPC3506W-G KBPC3508-W KBPC15W-G BRIDGE RECTIFIERS kbpc 1510 SMD MARKING CODE 50A KBPC2510W
Contextual Info: COMCHIP Silicon Bridge Rectifiers SMD Diodes Specialist KBPC10005W-G Thru. KBPC5010W-G Series Reverse Voltage: 50 to 1000V Forward Current: 10/15/25/35/50A RoHS Device KBPC-W Features -Surge overload-240~500 Amperes peak -Low forward voltage drop -Electrically isolated base -2000 Volts

7408 voltage regulator

Abstract: ad5290 ADCM371 ADR512
Contextual Info: FEATURES 256 position 10 kΩ, 50 kΩ, 100 kΩ +20 V to +30 V single-supply operation ±10 V to ±15 V dual-supply operation 3-wire SPI -compatible serial interface Low temperature coefficient 35 ppm/°C typical THD 0.006% typical Midscale preset Compact MSOP-10 package

Contextual Info: Wha% H E W L E T T WL'KM P A C K A R D Avantek Products Voltage-Controlled AGC Amplifier 10 to 1000 MHz Technical Data AGC-1053 Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz • MODAMP Silicon Monolithic Gain Stages • AGC Range: 35 dB Typ

MMSZ4681

Contextual Info: MMSZ4681-V to MMSZ4717-V www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes • Standard Zener voltage tolerance is ± 5 % • High temperature soldering guaranteed: 260 °C/4 x 10 s set terminals • These diodes are also available in DO-35 case

Contextual Info: Coaxial Switch ZMSW-1111 50Ω SPST Pin Diode Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Features • wideband, 10 to 2500 MHz • good isolation, 35 dB typ. +20 dBm Control Current Applications 5mA Coaxial/Pin Connections

Contextual Info: avantek in c 44E D B , A V A N T E 1141Ub OGGÔiaa S IAVA AGC-1053 Voltage-Controlled AGC Amplifier 10 to 1000 MHz FEATURES APPLICATIONS • Frequency Range: 10 to 1000 MHz • MODAMP Silicon Monolithic Gain Stages • AGC Range: 35 dB Typ • 0 to 5 V Control Voltage

240-06A

Contextual Info: DSEC 240-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 120 A VRRM = 600 V trr = 35 ns with soft recovery Non isolated VRSM VRRM V V 600 600 Type DSEC 240-06A Preliminary data Symbol Conditions IFRMS IFAVM TC = 105°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

Contextual Info: Fast Recovery Epitaxial Diode FRED V RSM V rrm V V 600 600 DSEI36 A Type f 37 A rr 35 ns C DSEI 36-06AS I Maximum Ratings Test Conditions ^FRMS ^FRM "^"vj — "^"vJM Tc = 85°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited byTVJM 70

74HC592

Abstract: M54HC592 M54HC592F1R M74HC592 M74HC592B1R M74HC592C1R M74HC592M1R
Contextual Info: M54HC592 M74HC592 8 BIT REGISTER BINARY COUNTER . . . . . . . . HIGH SPEED fMAX = 35 MHz TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS tPLH = tPHL SYMMETRICAL OUTPUT IMPEDANCE

8-06A

Abstract: 806A
Contextual Info: DSEP 8-06A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 35 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 8-06A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5

MTZJ SERIES ZENER DIODES

Abstract: zener 6b1 6b2 zener zener 5.1
Contextual Info: LESHAN RADIO COMPANY, LTD. MTZJ SERIES ZENER DIODES MTZJ MTZJ SERIES ZENER DIODES Package Dimensions: DO-35 VZ V Zener Voltage Z Part No (Thin suffix) Voltage A 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 MTZJ 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 1.880-2.100