MBR2030CTL Search Results

Contextual Info: MBR2030CTL Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)20

B2030

Abstract: B-2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.

MBR2015CTL

Abstract: B2015
Contextual Info: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA MBR2015CTL MBR2030CTL SWITCHMODE Dual Schottky Power Rectifiers MBR203QCTL is a Motorola Preferred Device . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal

b2030l

Abstract: MBR2030CTLG b2030lg SCHOTTKY BARRIER RECTIFIER aka B2030 MBR2030CTL
Contextual Info: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability

B2030L

Abstract: B2030LG MBR2030CTLG MBR2030CTL SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability

2N2222

Abstract: 2N6277
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.

B2030L

Contextual Info: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability

MBR2030CTLG

Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

MBR2030CTLG

Abstract: 2N2222 B2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: DIGITRON SEMICONDUCTORS MBR2015CTL-MBR2030CTL 20A SCHOTTKY RECTIFIERS MAXIMUM RATINGS Rating MBR Symbol 2015CTL 2030CTL 15 30 Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current

B2030

Abstract: 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.

BR2030C

Abstract: MBR2015CTL B2015 tl 2n2222
Contextual Info: MOTOROLA Order this document by MBR2015CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Dual S ch o ttky Pow er R e ctifiers MBR2015CTL MBR2030CTL . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te-o f-th e-art geometry features epitaxial construction with

MBR2030CTLG

Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

30LT30CT

Abstract: 32CTQ030 FST3230 MBR2030CTL
Contextual Info: FST3230 30 Amp Schottky Rectifier Dim. Inches Minimum .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P R M M illim eter Maximum Minimum -.500 .190 .014 .080 .015 .045 .090 .415 .055 .190 .260 .650 .161 .135 .250 .580 .210 .022 .115 .040 .070

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

IRL3103

Contextual Info: FA IR C H IL D www.fairchildsemi.com Ml C O N D U C T O R RC5031 Adjustable Switching Regulator Description • High power switched-mode DC-DC controller can source in excess of 13 A • Output voltage adjustable from 1.5V to 3.6V • 85% efficiency • Cumulative accuracy <3% over line, load, temperature

660CT

Abstract: MUR1620CT MBR2
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1N4001 − 4007 Lead Mounted Rectifiers 50−1000 Volts Diffused Junction . . . . . . . . . . . . . . . . . . . . . . 29 1N4933 − 4937 Fast Recovery Rectifiers 1.0 Ampere 50−600 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

MBRM110LT1

Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
Contextual Info: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3

418B-04

Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35

mur860 diode

Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
Contextual Info: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

LT1047

Abstract: COILTRONICS LT1074 LT1074CY LT1074 LT1074/LT1076 equivalent de LT1074 LT1074HVCY LT1074HVMK LT1074 24v LT1076
Contextual Info: LT1074/LT1076 Step-Down Switching Regulator tions allow this device to be used as a positive-to-negative converter, a negative boost converter, and as a flyback converter. The switch output is specified to swing 40V below ground, allowing the LT1074 to drive a tappedinductor in the buck mode with output currents up to 10A.