1SS196 Search Results

marking G3

Abstract: 1SS196 J-STD-020D
Contextual Info: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • • • • Low Leakage Current Surface Mount SOT-23 Package Epoxy meets UL 94 V-0 flammability rating

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage

FD MARKING CODE SOT23

Abstract: MARKING fd SOT23 1SS196
Contextual Info: 1SS196 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: FD SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC

Contextual Info: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High Conductance   Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

G3 SOT-23

Abstract: MARKING G3 SOT-23 DC surface mount power diode 1SS196 marking G3
Contextual Info: BL Galaxy Electrical Production specification Surface mount switching diode 1SS196 FEATURES z Pb Low forward voltage VF 3 =0.9V(typ). Lead-free z Fast switching. z Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS z High speed switching application. SOT-23

1SS196

Contextual Info: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

marking G3

Abstract: 1SS196
Contextual Info: 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

1SS196

Contextual Info: RECTRON 1SS196 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

Contextual Info: Product specification 1SS196 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05

1SS196

Contextual Info: 1SS196 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + G5 2.5-0.3 FEATURES: . Small Package SOT-23M0D . Low Forward Voltage V F = 0 .9 V T y p . . Fast Reverse Recovery Time trr= l ,6 n s ( T y p .) . Small Total Capacitance

marking G3

Abstract: a10t 1SS196
Contextual Info: 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

Contextual Info: TO SHIBA 1SS196 1 S S 1 96 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.5 2 .5 -0 .3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp 3 = 0.9V (Typ.)

1SS196

Contextual Info: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA • Case: SOT-23 Plastic

marking G3

Contextual Info: 1SS196 Switching Diodes SOT-23 1. N.C. 2. ANODE 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits

1SS196

Contextual Info: 1SS196 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS196 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm

1SS19

Abstract: 1SS19 TOSHIBA
Contextual Info: TOSHIBA 1SS196 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS19 6 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 2 .5 - 0.5 0.3 + 0.25 1 .5 -0 .1 5 • Small Package : SC-59 • Low Forward Voltage : V jt 3 = 0.9V (Typ.) • Fast Reverse RecoveryTime

Switching Diodes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • • • • Low Leakage Current Surface Mount SOT-23 Package Epoxy meets UL 94 V-0 flammability rating

top marking c3 sot23

Abstract: marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3
Contextual Info: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications

ISS19

Abstract: ISS196 marking G3 1SS196
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching DIODES FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C. MARKING: G3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃

Contextual Info: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High-Speed Switching Applications z Small package: SC-59 z Low forward voltage: VF 3 = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 pF (typ.)

1SS196

Contextual Info: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)