0220A Search Results

BUJ202

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T 0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: NHD 0220AZ FL YBW Character Liquid Crystal Display Module NHD 0220 AZ F L Y B W Newhaven Display 2 lines x 20 characters

15n10

Abstract: 100-c30 smd 33a C30T09Q C30T09Q-11A C30T10Q C30T10Q-11A FCH30A09 FCH30A10 GCH30A09
Contextual Info: SCHOTTKY BARRIER DIODE /on 1nm i 33A/90— 10UV C30T09Q C30T09Q-11A GCH30A09 FCH30A09 C30T10Q C30T10Q-11A GCH30A10 FCH30A10 FEATURES o | SQUARE-PAK~| TO-263AB SMD Packaged in 24mm Tape and Reel : C30T • • Q o Tabless TO-220: C30T-Q-11A o T 0220A B : GCH30A • •

BUK455-500B

Abstract: BJE 80 diode T0220AB
Contextual Info: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation

XY 805 ic

Contextual Info: C RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FAST RECOVERY RECTIFIER VOLTAGE RANGE-50 to 800 Volts CURRENT-8.0 Amperes FEATURES * F a st sw itc h in g * L o w le akage * L o w fo rw a rd v o lta ge drop * H igh cu rrent capability T 0220A * H igh s u rg e capability

2x15

Abstract: STPS125U STPS10L25D
Contextual Info: POWER RECTIFIERS rz 7 POWER SCHOTTKY DIODES SMA S MB DPAK T 0220AC ^ 7/ D2PAK 0220AB SGS-THOMSON Ranœ iiLiEOTOiDËi ISOWATT22QAB T0247 ISOTOP1 LOW VF SCHOTTKY RECTIFIERS T j max =150°C (except for 15V & 25V @ 125°C) lo V rrm VF @ lo Max (A) (V) STPS5L25B

L05P

Abstract: C-K85 TA78DL05P TA78DL12P
Contextual Info: TOSHIBA-, ELECT RON IC GS N E A R IN T E G R A T E D C IR C U IT S IL IC O N M O N O LITH IC d ËT| 001^334 TA78DL05P— TA78DL24P T-5JWM3 o 5V, 6V, 8V, 9V, 10V, 12V, 15V LOW DROPOUT VOLTAGE REGULATOR Th e T A 7 8 D L series are three-terminal regulators w i t h m a x i m u m output current 250mA, packed in

ISO11359-2

Abstract: 1140A1 ASTM d792 Polyphenylene sulfide OF-1008 PPS 1130a1 modulus Fortron 1140L4 1140A64 1140A6 1140L4
Contextual Info: SENSORS & CONTROLS PRODUCTS June, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Model EN Optical Encoder Series Material Change Sensors and Controls Division will be changing the plastic material used in molding the LED trimming

BUK555-60A

Abstract: BUK555-60B T0220AB
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

thyristor TAG 103 X

Abstract: thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400
Contextual Info: PHILIPS INTERNATIONAL bSE 3> WM 711Dß2b 0Gfci23S0 bb2 • P H I N I - J BT150 k _ THYRISTORS Glass-passivated th yristo r in T 0-220A B envelope, featuring sensitive gate triggering as low as 200 juA.

RCA413

Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

IRF3205

Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
Contextual Info: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V

2N6103

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

BD278

Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
Contextual Info: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2

2N3055 RCA

Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

TIP29 RCA

Abstract: RCA TIP30
Contextual Info: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature

Thyristor Device Data motorola

Contextual Info: MOTOROLA Order th is document by C122F1/D SEMICONDUCTOR TECHNICAL DATA C122F1 Silicon Controlled R ectifiers Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,

Contextual Info: SRA1020 THRU SRA1060 TSC S 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 20 to 60 Volts Current 10.0 Amperes T 0-220A Features -y^ A .185 4.70 .175 4.44) Low forward voltage drop High current capability High reliability High surge current capability

Contextual Info: ITH08C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5044-1.2 O ctober 1998 T h e IT H 0 8 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

BUK454-800A

Abstract: BUK454-800B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK552

Abstract: BUK552-60A BUK552-60B T0220AB D0307
Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bbSa^Bl DD3D7fiD 45*} ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

P2N20

Abstract: RFP2N20
Contextual Info: R FP2N 18 RFP2N20 33 H a r r i s N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Features Package T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rD S °n = 3-5 fi • SOA is Power-Dissipation Limited DRAIN FLANGE • Nanosecond Switching Speeds

Contextual Info: SCHOTTKY BARRIER DIODE ioa /sov FCQ10A03L 3.H.122 MAX FEATURES 10.31.4051 3 .4 I.1 3 4 U . . ^ / r ô ï â ) UIA o S im ila r to T 0-220A B C ase O F u lly M olded Iso la tio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C ath o d e C om m on