BBS313 Search Results

Marking G1s

Contextual Info: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF

MPSA26

Contextual Info: bTE T> m MPSA25 MPSA26 MPSA27 bbS3131 0D2B01S b?0 • APX N AUER PHILIPS/DISCRETE A NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77. Q UICK REFERENCE D A T A

Contextual Info: *' N AflER PHILIPS/DISCRETE ^ I f ' * bbS3131 DQ2E3S7 a • BYH2U SERIES ESE D ■ P O S -/7 J V. ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

dk 2482 h transistor

Abstract: NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 transistor N43 557 sot143 BFG540 BF 199 transistor
Contextual Info: e • ^ _ Philips S em iconductors ^ N • bbS3131 AMER 0025011 PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES 253 £ Product specification b7E BFG540; BFG540/X; BFG540/XR PINNING • High power gain • Low noise figure • High transition frequency

modulator circuit

Abstract: BY438 Philips diode tFR
Contextual Info: N AMER PHILIPS/ DISCR ETE bRE » • bbS3131 D0Eb471 2HT ■ APX BY438 A PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The

SCR 1989

Contextual Info: N AUER PH IL IPS /DISCR ETE bbS3131 D02042S 0 2SE D PowerMOS transistor BUK446-1000A BUK446-1000B T -31-d7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

btw40

Contextual Info: N AMER PHILIPS/DISCRETE bbS3131 D 0 i n 3 7 ObE D 4 BTW40 SERIES r ~ a s -~ /7 THYRISTORS Also available to BS9341-F083 Glass-passivated silicon thyristors in metal envelopes, intended for use in power control applications in general, and lighting control in a.c. controller circuit up to 2,5 kW in particular. A feature of the

Contextual Info: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­

BUK446

Abstract: BUK446-1000A transistor k446 BUK446-1000B k446 diode t25 4 L0
Contextual Info: N AMER PHILIPS/DISCRETE 2 SE D • bbS3131 Q02042S M PowerMOS transistor BUK446-1000A BUK446-1000B T - 3 7 - 0 ? GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

TRIAC BT134W-500

Abstract: bt134 phase control Triac bt134 500e BT134 BT134W BT134W-500 W500E 600ebt134 BT134W-500E/600E
Contextual Info: bbS3131 DDESb7S flbT IAPX Philips Semiconductors Product spécification Triac BT134W series N AUER PHILIPS/DISCRETE b?E D« GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in SOT223 envelopes suitable for surface mounting. They are intended for

BLY94

Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
Contextual Info: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­

BY614

Contextual Info: b^E » N AMER PHI LIPS/DISCRETE m bbS3131 OOSbSQl ÔOb BY614 I IAPX M IN IATUR E H IG H -VO LTAG E S O F T -R E C O V E R Y RECTIFIER DIODE Glass-passivated re c tifie r diode in a m inia tu re h e rm e tica lly sealed axial-leaded glass envelope. It is intended as a general purpose re c tifie r fo r high frequencies and high voltages and o w ing to its small size

LD25C

Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BTB 134

Abstract: BF752 MRD 532 transistor code r8
Contextual Info: • Philips Sem iconductors — — bbS3131 □DS4b cib bTb BiAPX . N AMER PHI LIPS/DISCRETE P m /w t b?E NPN 7 GHz wideband transistor FEATURES ^ BF752 PINNING • High power gain • Low noise figure • Gold metallization ensures excellent reliability.

Contextual Info: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78

Contextual Info: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement

by617

Abstract: eht rectifier monitor EHT diode Cathode indicated by blue band eht of monitor ee4 diode
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3131 D02bSD4 5 IS * A P X Philips Sem iconductors Product specification EHT avalanche very fast *. . soft-recovery diodes FEATURES • • • Soft-recovery non snap-off characteristics Capable of absorbing avalanche

BY709

Abstract: by707 BY708
Contextual Info: bTE D • bbS3131 002b5El bT4 ■ APX A BY707 BY708 BY709 _ SILICON E.H.T. SO FT -R EC O V ER Y RECTIFIER DIODES* E .H .T . rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.

OM323

Abstract: SF 829 B sf 829 d heatsink catalogue DIN45004 OM323A OM323A philips IEC134 aluminium plane heatsink SF 827 d
Contextual Info: N AMER P H ILIP S /D IS C R ETE SSE D • bbS3131 1 OM323A T'IH-û'î'OX HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in the hybrid technique, designed for use in M A T V systems, and as general purpose amplifier for v.h.f. and u.h.f. applications requiring a high output level.

k446

Abstract: BUK446-1000B
Contextual Info: N AMER P H IL IP S /D IS C R E T E b'ìE D • bbS3131 DD3DSÛS rnm ps semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

OF432

Contextual Info: I N AMER PHILIPS/DISCRETE TDD D bbS3131 QD1014D 0 X MAINTENANCE TYPES 90D 10140 D BY224 SERIES t-a s -o f SILIC O N BRIDGE RECTIFIERS Ready-for-use mains full-wave bridges, each consisting of four double-diffused silicon diodes, in a plastic encapsulation. The bridges are intended for use in equipment supplied from mains with r.m.s.

Contextual Info: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.

Contextual Info: • bbS3131 0024537 1A7 H A P X N AUER PHILIPS/DISCRETE b?E T> BCV27 BCV47 ;v SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SOT23 envelope. P-N-P complement is BCV26/46. QUICK REFERENCE DATA BCV27 BCV47 Collector-emitter voltage open base

Contextual Info: N AMER PHILIPS/D'ISCRETE 25E D • bbS3131 GQlfi425 i ■ J OM339 t 7 y -0 7 -0 1 - HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid integrated circuit technique, designed fo r use in mast­ head booster-amplifiers, as amplifier in MATV systems, and as general-purpose amplifier fo r v.h.f. and