LD25C Search Results

centronic LD2

Abstract: LD2-5A LD12-5A LD16-5A LD16-5C LD20-5 LD35-5 LD50-5
Contextual Info: CENTRONIC LTD hse t> m m s i a ? o o o o o n b • c e n t r*y/-v£r* Silicon Photodetectors_ Series 5 Low Cost Photovoltaic Linear Arrays The Series 5 are a range of multiple element low cost linear arrays for photovoltaic operation offering both high blue sensitivity and high

Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A

PHN220

Abstract: 98 100 16 capacitor SOT96
Contextual Info: Objective specification Philips Semiconductors TrenchMOS transistor FEATURES PHN220 SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

GIS 110 kV

Contextual Info: Philips Semiconductors Product specification BUK9880-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very

BUK445

Abstract: BUK445-60A BUK445-60B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: CENTRONIC LTD MSE D m s ia ? ooooon t cENTr*y/-y^- Silicon Photodetectors Series 5 Low Cost Photovoltaic Linear Arrays The Series 5 are a range of m ultiple elem ent low cost linear arrays for photovoltaic operation offering both high blue sensitivity and high

lg ipm

Abstract: PHT11N06T 25C312
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET PHT11N06T GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the

LD25C

Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHX4N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics

BUK454-500B

Abstract: BUK454 BUK454-500A T0220AB
Contextual Info: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

PHF14NQ20T

Abstract: PHX14NQ20T
Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching V DSS = 2 0 0 V lD = 7 .6 A ^ ds on — 2 3 0 m£2

BSH201

Abstract: PHP222
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL QUICK REFERENCE DATA V DS = -6 0 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package

PHB65N06T

Abstract: T404
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

transistor Ip

Abstract: BUK426-200A BUK426-200B
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE bbSBTBl D 0ÜSÜ5S0 5 B U K 426-200A B U K 426-200B PowerMOS transistor T -3 7 -il QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

BUK437-400B

Abstract: DIODE JS.4 GS 069 LF
Contextual Info: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

a80J

Abstract: PHB80N06LT PHP80N06LT T0220AB 600 V logic level fet
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP80N06LT, PHB80N06LT QUICK REFERENCE DATA VDSS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics

BSH202

Abstract: VH29
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL QUICK REFERENCE DATA VDS = -30 V • Low threshold voltage • Fast sw itching • Logic level com patible • S ubm iniature surface m ount package

PHB80N06T

Abstract: T404
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in

Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor FEATURES • • • • IRF540, IRF540S SYMBOL ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance QUICK REFERENCE DATA d I / ^ ¡7 dss - 100 V

Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • PHP20NQ20T, PHB20NQ20T QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance V dss — 2 0 0 V

smd transistor 24 sot23

Abstract: BSH203 SC18
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL QUICK REFERENCE DATA s • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package lD = -0.47 A

PHT6N06T

Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the