SOT96 Search Results

Contextual Info: Package outline TFBGA64: plastic thin fine-pitch ball grid array package; 64 balls; body 4 x 4 x 0.8 mm A B D SOT969-1 ball A1 index area E A A2 A1 detail X e1 1/2 e ∅v ∅w b e C C A B C M M y y1 C H G F e E e2 D C 1/2 e B A ball A1 index area 1 2 3 4 5 6 7 8

Contextual Info: PC board footprint NXP Semiconductors Footprint information for reflow soldering of TFBGA64 package SOT962-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

Contextual Info: Package outline LFBGA208: plastic low profile fine-pitch ball grid array package; 208 balls; body 12 x 12 x 1 mm B D SOT966-1 A ball A1 index area E A2 A A1 detail X e1 ∅v ∅w b e M M C C A B C y y1 C U T R P N M L K J H G F E D C B A ball A1 index area

Contextual Info: Package outline HLQFN78R: plastic thermal enhanced low profile quad flat package; no leads; 78 terminals; resin based; body 12 x 12 x 1.15 mm B D SOT967-1 A terminal 1 index area E A detail X e1 eR L1 L D2 A14 v w b e A26 B10 D3 A13 M M C C A B C y1 C y A27

250 B 340 smd Transistor

Contextual Info: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 210

Abstract: 250 B 340 smd Transistor 4032SPN marking code 33 SMD ic transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR FR
Contextual Info: PBSS4032SPN 30 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

SOT96

Contextual Info: SO 8 SOT96-1 Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 23 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

Contextual Info: PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032SPN 30 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041SPN 60 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

transistor bd139

Abstract: philips power transistor bd139 BD139 smd transistor zi
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency

TRANSISTOR SMD MARKING CODE UA

Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODES PMEM4030NS PMEM4030PS MARKING CODE SMD IC smd transistor marking A3
Contextual Info: PMEM4030NS NPN transistor/Schottky rectifier module Rev. 02 — 8 July 2005 Product data sheet 1. Product profile 1.1 General description Combination of a NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1

03ac29

Abstract: HZG336 MS-012AA PHN103T
Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .

SI4884

Abstract: MS-012AA
Contextual Info: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .

si4800

Abstract: 03af85 MS-012AA Si4800 philips
Contextual Info: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .

NPN/a105 transistor

Contextual Info: PBSS4021SPN 20 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

LS2001S

Abstract: PBLS2001S MARKING SMD PNP TRANSISTOR FR
Contextual Info: PBLS2001S 20 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

Contextual Info: PBSS4021SN 20 V, 7.5 A NPN/NPN low VCEsat BISS transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032SPN 30 V NPN/PNP low VCEsat BISS transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

PowerMOS Transistors

Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)

so8 footprint

Abstract: PBLS2002S
Contextual Info: PBLS2002S 20 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

sot96

Contextual Info: Philips Semiconductors Package outlines SO8: plastic small outline package; 8 leads straight ; body width 3.9 mm 1997 May 22 6 SOT96-2

t8 smd transistor

Abstract: 552 smd transistor smd transistor w J 3 58 transistor 75 U50 8x 8 smd transistor BLT14 MBC180 transistor t8
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.