0D305 Search Results

BUK444

Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 0D305^ Philips Semiconductors Product Specification PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N APIER PH IL IP S/ D IS C R ET E b^E D • bbSa^l DD3QSSS 7TM « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M325CXJ-5,-6,-7/ MH4M325CNXJ-5,-6,-7 HYPER PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M325CXJ/CNXJ is 4194304-word x 32-bit dynamic RAM. This consists of eight industry standard 4M x 4

Contextual Info: f PRELIMINARY CYPRESS C Y 7 C 92 4D X 200 MBaud HOTLink Transceiver Features Second generation HOTLink™ technology Fibre Channel and ESC O N com pliant 8B /10B encoder/decoder 10- or 12-bit pre-encoded data path raw m ode 8- o r 10-bit encoded data transport (using 8B/10B

BUF600

Abstract: BUF601
Contextual Info: Or, Call Customer Service al 1-800-548-6132 USA Only B U R R - B R O W N <S BUF600 BUF601 1 BUF600/601 E FEATURES APPLICATIONS • OPEN-LOOP BUFFER • VIDEO BUFFER/LINE DRIVER • HIGH-SLEW RATE: 3600V/(is, 5.0Vp-p • INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT

Contextual Info: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

mcac

Contextual Info: KM41 6C256DT ELECTRONICS CMOS D R A M 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

phototransistor philips

Abstract: 004583 BS415 BS7002 SL5582 SL5583 diode ja diode Optocouplers MBB038
Contextual Info: PHILIPS INTERNATIONAL 41E ]> 711GÖ2b 003D54Ö û • PHIN T - V / - « Philips Sem iconductors 3 Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external

LR7189

Abstract: 3-176264-6 31-76264-9 1-176264-5
Contextual Info: ^ -u \'O S 'O n AMPMODU 2mm Connectors Board-to-Board Catalog 82771 Revised 8-94 Breakaway Headers, Unshrouded, Double Row, Thru-Hole Mount 0.5 [.02] Square Straight Posted Contacts . M ax. M aterial and Finish: Housing— Black thermoplastic, 94V-0 rated

Contextual Info: N AMER PHILIPS/DISCRETE bTE D LbS3T3]i QQ3DS3D O b i • Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

el133

Contextual Info: Spread Spectrum System Frequency Synthesizer Features CPU Output Jitter: . 150ps CPUdiv2, IOAPIC Output J itte r:.250 ps • Maximized EMI suppression using Cypress’s spread