00GS4 Search Results

ECG1410

Abstract: ECG1415 vco ss
Contextual Info: PHILIPS E C G INC 17E biaSBiSä 00GS434 ‘ì ECG1415 T V Color Com pensation C k t Sem ico nd uctors Features • Incorporates a compensation circuit for skin color • Built-in automatic color compensation circuit • 12 V voltage supply operation 14 13 12 II 10 9

2SB1276

Abstract: 2SB821 R2709 2sb127 HSRG zf 200 CJ1M
Contextual Info: R OH M CO h* 7 > V M QE LTD • D 7 ö 2 ö cm 00GS4Ö7 D BRHM 2SB821/2SB1276 T -2 7 - O ? x tf $ * V T ^7° \s - 1 -B PNP V IJ a > h 7 > y x £ i& rbb' il'fiM /L o w rbb' Low Noise Amp. Epitaxial Planar PNP Silicon Transistors $ /T r a n s is to r s 2 S B 8 2 1

2SA937M Q

Abstract: 2SA1547 7270 ic 2sa154 2SA937M 2SC2021M 2SC4010 937M
Contextual Info: ROHN CO LTD 4GE D . 7fiSûcm I//Transistors 2 2 00GS427 4 BIRHM 2SA937M/2SA1547 9 3 7 M x tr $ * > t /u y - j-m p n p v y -3 > h 7 7 - 2 7 - 0 ^ > v ;* * “ ÂB'JHl-flilÉÎfiÆ /General Small Signal Amp. Epitaxial Planar P N P Silicon Transistors • Wfivfisfelij/’Dlmensions Unit : mm

Contextual Info: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.

Contextual Info: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL

F233

Abstract: IRF230
Contextual Info: 7964142 k | 7WHS OGOSG^HSf SAMSUNG SEM ICON DU CTOR I N C _ 98D 0 5 0 9 4 _D T * 3 V l I "-CHANNEL POWER MOSFETS IRF230/231/232/233 FEATURES LOW RDS on Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Low input capacitance

1RF9130

Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
Contextual Info: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id

5109d

Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

ssh20n50

Abstract: ssm20n45 20N45 2on50 20n50
Contextual Info: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50

IRFP220

Abstract: IRFP222 IN 414b B diode IRFP223
Contextual Info: 7964142 -•••• . SAMSUNG SEMICONDUCTOR I 7 ^ 4 1 4 5 DOGSI b IRFP220/221/222/223 DE i IN C □ 9 8 D 0 5169 | D7 ^ 39- / / N-CHANNEL POWER MOSFETS FEATURES Low RoS on Improved inductive riiggedness Fast switching times Rugged polysilicon gate cell structure

diode 9232

Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
Contextual Info: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on

6mb175s-120

Abstract: 6mb175s ci 4518 6MBI75S-120 6mb175 ic 4518 6mb17 82307 600Y QDQ5427
Contextual Info: Thi» ma 1er la* and the Inlorrrntion herein is the property o f Fuji Eiecuic C o.lid .They shall be neither reproduced. copied, lent, or disclosed in any way w hatsoever for the me of a n y third psny.nor used lor the manufacturing purposes w h h o u t the expfM S Written corvient of Fuji Electric Co. Ltd.

3n70

Abstract: sem 304 SSM3N70 E5304
Contextual Info: 7 964142 S A M S U N G S E M I C O N D U C T O R . INC DE 1 7T b 4 1 4 E □□□5304 jCia 98D .053 0 4 i ^ 1^ ' 1 D N -C H A N Ñ E lT 0 ? ' " POWER MOSFETS SSM3N70 FEATURES / • • • • • • • • • Low R d s oii ' at high voltage Improved inductive ruggedness

Contextual Info: - Z a ê A i^ ^ S A M S U N ^ ^fi íP k n r n M n i i r 'T n R DE~J 7 T b 4m S 98D Tw n-—- v ODDSIST T | - 05129 D7-3?~f/ N-CHANNEL POWER MOSFETS IRF420/421 /422/423 FEA TU R ES Low Ros on at high voltage Improved inductive ruggedness. Excellent high voltage stability

HYM5328104B

Abstract: HYM532814B HYM532810 HYM532814
Contextual Info: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are

Contextual Info: Tem ic HM 65787 MATRA MHS 64 K X 1 High Speed CMOS SRAM Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

IRFP250

Abstract: 1RFP250 IRFP253 RIKC IRFP251 IRFP252 irfp250 mosfet samsung MOSFET
Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR I NC ]>e "| T T b M m S DGDSlflM b | - N-CHANNEL POWER M OSFETS IRFP250/251Z252/253 FEATURES • Low RDS on N • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

Contextual Info: SILI CO N S Y S T E M S 4bE D INC • 00G547Ü 7 « S I L SSI 73K224L ¿ m m s if s k m V.22bis/V.22/V.21, Bell 212A/103 Single-Chip Modem s ' A TDK Group/Company T - 7 5 -3 3 - 0 5 November 1991 FEATURES DESCRIPTION The SSI 73K224L is a highly integrated single-chip

Contextual Info: • A3623&3 Q0DS37L, TS1 « S O N Y SONY C X K 1 2 0 6 A M /A T M Video Signal Field Memory D escription The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith both NTSC and PAL and o f storing pictures fo r one 8-bit field w ith tw o

6mb175s-120

Abstract: 6MBI75S-120 ci 4518 6mb175s S423 25t0200
Contextual Info: X SPECIFICATION D e v i c e Name .* £ o £ ft " £ * u S * _• fss si GBT M od u I e T y p e Name 6 M B I 7 5 S —120 Spec. No. M S 5 F 4 5 18 & S s 3 0*S ea i f 5 *» * ~ o ï •S « 5-S * “ JCS -gi Ii s3 'S u n i —o *v». 5 -C - ? Ç Tl-fl C rJ •

Mosfet K 135 To3

Abstract: 431z
Contextual Info: 7964142 tM C M iM fî c c ü r r 'A M n n r 'T n c :n c 98D DE | ? citi414E 00DS1B4 S 0 5134 D N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness Excellent high voltage stability

IRF44

Abstract: IRF440
Contextual Info: ; 7964142 DE I T T b m M E SAMSUNG S E M I C O N D U C TOR □ □ □ 5 1 3 e] 1 I 98D IN C ^ D T S f -t3 05139 N-CHANNEL POWER MOSFETS IRF440/441/442/443 FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness

IRF250

Abstract: F25-3
Contextual Info: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

irfp321

Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
Contextual Info: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure