1RFP250
Abstract: ic HP 1003 WA
Contextual Info: General Description Features 7V to 32V operation Less than 1jj.A standby current in the “O FF” state Internal charge pump to drive the gate of an N-channel power FET above supply M IL-STD-883 Method 5004/5005 version available Available in small outline SOIC packages
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il-std-883mic5010ic501xswitch12+3ic50101rfp250ic hp 1003 wa
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1RFP250
Contextual Info: • 4302571 00S4205 IDI ■ HAS IR FP250/251/252/253 IRFP250R/251R/252R /253R Q RHARRIS N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO -247 TOP VIEW • 27A and 33A, 150V - 200V • i"DS on = 0.085ÍÍ and 0.120ft DRAIN
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00s4205fp250/251/252/253irfp250r/251r/252r/253r+6120ft1rfp250irfp251irfp252irfp253irfp250r
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2N6763
Abstract: 2N6764 IRF150 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 IRFP441
Contextual Info: Material NATL This N-Channel Power MOSFETs N-Channel Power MOSFETs Continued 1600 350 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600 350 150 E4 4 0.25 0.85 4 60 1600 350 150 E4 2 4 0.25 1.1 4 60 1600 350 150 E4 4.8 2 4 0.25 1.1
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irfp441irf442o-204aairf443+9irf840o-220irf841irfp1512n67632n6764irf150irf842irf843
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1RFP250
Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
Contextual Info: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32
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000570bo-204o-205o-220+16o-247irf223irf623irff233irf221irf6211rfp250irf250 to-247thomson distributorirf631irf630 irf640irf250irfd210irf331irf220irf241
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