1RFP240
Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
Contextual Info: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)
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irfp2321rfp2331rfp240irfp241+12irfp242irfp2431rfp330irfp3311rfp332irfp333irfp310t03pirfp250irfp320irfp323n4001
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irfp321
Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
Contextual Info: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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irfp320/321/322/323irfp320irfp321irfp322+4irfp32300gs435mosfet p.321samsung tv
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irf3203
Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
Contextual Info: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area
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irf720/721/722/723irfp320/321/322/323irf320/321/322/323irf720/irfp320/irf320+16irf721/irfp321/irf321irf/22/ihfp322/irf322irf723/irfp323/irf323irf3203irf3203 mosfetirfp320-3irfp3203irfp321irf320f321irf n-channel power mosfetsjys 33st e 722
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