YG802C06 Search Results

YG802C06

Abstract: smew JY diode
Contextual Info: YG802C06 10A I Outline Drawing scHOTTKY b a r r i e r d io d e Connection Diagram • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

YG802C06

Abstract: yg802c a444
Contextual Info: YG802C06HOA ± / j v 1 * y ^ 5j — K SCHOTTKY BARRIER DIODE : Features Insulated p a ckag e by fully m o ld in g . • te V F Low V k 7C Connection Diagram Su p e r hig h speed s w it c h in g . H igh reliability by planer d e sig n . • f flìÉ I Applications

YG802C06R

Abstract: yg802c
Contextual Info: YG802C06R 60V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

Contextual Info: YG802C06R 60V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

A445

Abstract: PM 4A
Contextual Info: YG802C06HOA SCHOTTKY BARRIER DIODE : Features Insulated p ac ka g e b y fully m o ld in g . • te V F m m & m L ow V k Connection Diagram S u p e r h ig h speed s w it c h in g . • •fi'-i—mmz'thMiztote H ig h reliability by planer d es ig n. : Applications

C2101

Abstract: 30S3 T151 T760 T820 YG802C06
Contextual Info: YG802C06<ioa : Outline D raw ings SCHOTTKY BARRIER DIODE Features Insulated package by fully m olding. • 1&VF Low V h• 7> 4''/* > V X £ -YV 1 k% \z.& s.' C o n nection D iag ram Su p er high speed sw itching. • T V - * - t t n High reliability by planer design.

IRF 444 H

Abstract: A444 C-L00 YG802C06 a445 MTIS vvb1
Contextual Info: YG802C06HOA S ± 'M g *>a : Outline Drawings SCHOTTKY BARRIER DIODE : Features In s u la te d p a c k a g e b y fu lly m o ld in g . • te V F Low V* • %-i y f C onnection Diagram S u p e r h ig h sp e e d s w itc h in g . • -fi'-t-mmzjiiMit «Hi H ig h re lia b ility by p la n e r d e s ig n .

Contextual Info: YG802C06R 60V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

YG802C06

Abstract: A444
Contextual Info: YG802C06HOA ± / j v 1 * y ^ 5j — K SCHOTTKY BARRIER DIODE : Features Insulated p a ckag e by fully m o ld in g . • te V F Low V k 7C Connection Diagram Su p e r hig h speed s w it c h in g . H igh reliability by planer d e sig n . • f flìÉ I Applications

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009

230v 5v 2A 10W schematic

Abstract: electrolytic capacitor 22uf 400v ELECTROLYTIC capacitor, .10uF 50V IC PC817 DIODE SMD 44w transformer 230v to 5v 2A 50 Hz PWM AC 50HZ 230v dc 25a rectifier diode capacitor 2.2uF 400V SSP2N60
Contextual Info: Evaluation Board of SG6859 FEB184-001 Low Cost Green-Mode PWM Controller SG6859 High performance fly-back converter module Contents 1. General Introduction & Spec .P2 2. Functional Test Report.P3 3.

yg802c10

Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度

YG811S06

Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
Contextual Info: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O

common anode schottky to220

Abstract: ERB81-004 era-84 era82 ks823c esac82
Contextual Info: SCHOTTKY BARRIER DIODES <S 20 - 90Volts 45 VOLTS 2 0 - 3 0 VOLTS PACKAGE Part Number lo A SURFACE MOUNT SC TYPE 60 VOLTS lo (A) Part Number 1 SC802-04 Part Number SC802-06 90 VOLTS lo (A) Part Number 1 SC802-09 lo (A) 1 ERA82-004 *1 *1 1 ERA85-009 *1 ’1

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA