220F Search Results

Contextual Info: TOSHIBA 2SK3068 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt-M O S V 2SK3068 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE TO -220FL APPLICATIONS • • • • INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA 2SJ312 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon P Channel MOS Type L2-7i-MOS IV High Speed, High Current Switching Applications Features • 4-Volt G ate Drive • Low Drain-Source O N R esistance - r d s (ON) = S O m Q (Typ.)

7n52

Abstract: 1525P
Contextual Info: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3

Contextual Info: BT152X-400R SCR 26 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current

capacitive discharge ignition

Contextual Info: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking

2SB1335

Abstract: 2sd1855
Contextual Info: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING

2SD1414

Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SB1024
Contextual Info: Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications

2SB1015

Abstract: 2sB1015 y 2SD1406
Contextual Info: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

2SD1913

Abstract: 2SB1274
Contextual Info: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2SD1832

Abstract: 2SB1292
Contextual Info: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation

2SB1192

Abstract: 2SD1770
Contextual Info: Inchange Semiconductor Product Specification 2SB1192 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High VCEO ・Large PC ・Complement to type 2SD1770 APPLICATIONS ・Power amplifier ・TV vertical deflection output PINNING PIN DESCRIPTION

2SB1052

Abstract: 2SD1480 IC 4090
Contextual Info: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION

2SB942

Abstract: 2SB942A 1267A
Contextual Info: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

2SD2000

Contextual Info: Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base

500ma 40v pnp

Abstract: 2SA1280
Contextual Info: Inchange Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output

4n62k

Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Contextual Info: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3

STTH

Abstract: AV900
Contextual Info: STTH8L06 Turbo 2 ultrafast high voltage rectifier Features K • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Package insulation voltage: – TO-220AC Ins: 2500 V rms – TO-220FPAC: 2000 V DC

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1

2N62K3

Abstract: STD2N62K3 STP2N62K3
Contextual Info: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3

b01619

Abstract: D6NM60N
Contextual Info: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N

STP13NM60

Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N

10n62k3

Abstract: STF10N62K3 STI10N62K3 STF10N62K3 ST 10N6 10n62
Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3