YG802C Search Results

YG802C06

Abstract: smew JY diode
Contextual Info: YG802C06 10A I Outline Drawing scHOTTKY b a r r i e r d io d e Connection Diagram • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

YG802C06

Abstract: yg802c a444
Contextual Info: YG802C06HOA ± / j v 1 * y ^ 5j — K SCHOTTKY BARRIER DIODE : Features Insulated p a ckag e by fully m o ld in g . • te V F Low V k 7C Connection Diagram Su p e r hig h speed s w it c h in g . H igh reliability by planer d e sig n . • f flìÉ I Applications

YG802C09

Contextual Info: YG802C09 10A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching H • High reliability by planer design ) ■ Applications « - ! i I 2 ( Î Ì) • High speed power switching

yg802c10

Abstract: YG802C10R
Contextual Info: YG802C10R 100V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

yg802c09r

Abstract: YG802C09
Contextual Info: YG802C09R 90V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

q406

Abstract: DIODE G7 YG802C04
Contextual Info: YG802C04I1QA I Outline Drawings '> a SCHOTTKY BARRIER DIODE • 4#^: Features Insulated package by fu lly m o ld in g . • fcV p mwm&m Lo w Vk 'C onnection Diagram Super high speed sw itc h in g . • tv - :* - - ftmtzxznigmte r>H H ig h reliability by planer design.

YG802C06R

Abstract: yg802c
Contextual Info: YG802C06R 60V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

Contextual Info: YG802C09R 90V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

YG802C04

Contextual Info: YG802C04 ioa SCHOTTKY BARRIER DIODE : Features Insulated package by fully m oldin g. • ifeV F Low V f Connection Diagram Super high speed sw itching. • TV— fl t i High reliability by planer d e s ig n . n — r * h () : Applications > CD < • m n h T A v+ 's y

A448

Abstract: YG802N09 YG802C09 a449
Contextual Info: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m o ld in g . • te V F Low V F • Connection Diagram T . A 'V + V 'f Super high speed sw itchin g. • fa it YG 802C 09 High reliability by planer d e s ig n .’ {¿)Q PI

YG802C04

Abstract: YG802C04R
Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

Contextual Info: YG802C N 09 uoa) SCHOTTKY BARRIER DIODE •¡NHIc : Features • lfc w 11 # *e us £ t i t-.7 1\ , K ? -f 7 I nsul at ed packa g e by fu lly m o ld in g . • te V F IM tttt C onnection Diagram Low V k • X 'f S u p e r h ig h speed s w itc h in g . •

Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

YG802C04

Abstract: A442
Contextual Info: YG802C04HOA ' > 3 7 h + — /< y : t — F SCHOTTKY BARRIER DIODE : Features Insulated package by fully molding. • te V F Low V f Connection Diagram Super high speed switching. • y u— id:* ftffitt High reliability by planer design. Applications High speed power switching.

YG802N09

Abstract: YG802C09
Contextual Info: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m o ld in g . • te V F Low V F • Connection Diagram T . A 'V + V 'f Super high speed sw itchin g. • fa it YG 802C 09 High reliability by planer d e s ig n .’ {¿)Q PI

YG802C04

Abstract: YG802C04R
Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

YG802C09R

Contextual Info: YG802C09R 90V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

Contextual Info: YG802C06R 60V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

YG802C03

Contextual Info: YG802C03R 30V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 Low VF Super high speed switching. High reliability by planer design. 3 1.2±0.2 13Min 3.7±0.2 Features 2 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2

A445

Abstract: PM 4A
Contextual Info: YG802C06HOA SCHOTTKY BARRIER DIODE : Features Insulated p ac ka g e b y fully m o ld in g . • te V F m m & m L ow V k Connection Diagram S u p e r h ig h speed s w it c h in g . • •fi'-i—mmz'thMiztote H ig h reliability by planer d es ig n. : Applications

G802C04

Abstract: G802C
Contextual Info: YG802C0400A *± /J '> 3 SCHOTTKY BARRIER DIODE : Features • s ty # Insulate d package by fu lly m o ld in g . • te V F Low V f Connection Diagram S u per h ig h speed s w itc h in g . • 7V — f f it t H ig h re lia b ility by p la n e r d e s ig n .

10A Schottky

Abstract: YG802C09
Contextual Info: YG802C09 10A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design r * h cI ■ Applications ' , p H —j \ iÌ) -? (T • High speed power switching

C2101

Abstract: 30S3 T151 T760 T820 YG802C06
Contextual Info: YG802C06<ioa : Outline D raw ings SCHOTTKY BARRIER DIODE Features Insulated package by fully m olding. • 1&VF Low V h• 7> 4''/* > V X £ -YV 1 k% \z.& s.' C o n nection D iag ram Su p er high speed sw itching. • T V - * - t t n High reliability by planer design.