X13MM Search Results

Contextual Info: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier DFM Current 1.0 A Voltage 200 V to 1000 V FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated insertion • High forward surge current capability

X13mm

Abstract: transistor 1Bs DF005SA DF10SA
Contextual Info: DF005SA THRU DF10SA MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • Glass passivated chip junctions.

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier Current 1.0 A Voltage 200 V to 1000 V DFM FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated insertion • High forward surge current capability

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

MOLYNX

Abstract: wiring diagram of cctv camera NACP20 PLW231 ptz camera pcb circuit diagram PLW233 INS00053 TRX228 ptz camera wiring diagram cctv camera circuit diagram
Contextual Info: INSTALLATION INSTRUCTIONS INS00054 Issue 8 CONTENTS PAGE Important Notes / Preventative Maintenance . 1 General Description / Contents Of Box . 2

M29W128G

Abstract: M29W128GH M29W128GL
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs NUMONYX Flash M29W128G This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com

Contextual Info: IS42S32160A1 4M Words x 32 Bits x 4 Banks 512-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (4M x 32bit x 4bank) · Programmable Mode

Contextual Info: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)

Contextual Info: HEDFS103G . HEDFS107G 1.0 Amp. Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifier DFS Current 1.0 A Voltage 200 V to 1000 V FEATURES • Ultrafast reverse recovery time for high frequency • Ideal for automated placement • High forward surge current capability

DQ141

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

IS42S32800D-7BLI

Abstract: IS42S32800D IS42S32800D-7TLI IS42S32800D-6BL IS42S32800D-6TL IS42S32800D-7TL IS42S32800D-6TLI
Contextual Info: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION NOVEMBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)

Bridge Rectifier DB 045

Abstract: 152G 155G DB151G DB157G
Contextual Info: 1.5A Glass Passivated Bridge Rectifier DB151G – DB157G 1.5A Glass Passivated Bridge Rectifier Features • Glass passivated chip junction • Low leakage • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds

Contextual Info: IS42S32800 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM P JANUARY 2008 FEATURES DESCRIPTION •฀ •฀ •฀ •฀ •฀ •฀ The ISSI IS42S32800 is a high-speed CMOS configured as a quad 2M x 32 DRAM with asynchronous interface (all signals are registered on the positive

Lpddr2 Idd7

Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Contextual Info: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

Contextual Info: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 8,192 x 8,192 IDT72V73250 FEATURES: DESCRIPTION: • • The IDT72V73250 has a non-blocking switch capacity of 8,192 x 8,192 channels at 32.768Mb/s. With 16 inputs and 16 outputs, programmable per stream control, and a variety of operating modes the IDT72V73250 is designed

Contextual Info: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 FEATURES: • • • • • • • • • • • • • • 16K x 16K non-blocking switching at 32.768Mb/s 32 serial input and output streams Accepts single-bit single-data streams at 32.768Mb/s

Contextual Info: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 ADVANCE INFORMATION IDT72V73260 FEATURES: DESCRIPTION: • • The IDT72V73260 has a non-blocking switch capacity of 16,384 x 16,384 channels at 32.768 Mb/s. With 32 inputs and 32 outputs, programmable per

Contextual Info: PRELIMINARY IDT72V73250 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 8,192 x 8,192 FEATURES: DESCRIPTION: • • The IDT72V73250 has a non-blocking switch capacity of 8,192 x 8,192 channels at 32.768Mb/s. With 16 inputs and 16 outputs, programmable per stream control, and a variety of operating modes the IDT72V73250 is designed

M29W128FL

Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

DF005M

Abstract: DF10M
Contextual Info: DF005M THRU DF10M MINIATURE GLASS PASSIVATED SINGLE - PHASE BRIDGE RECTIFIER VOLTAGE - 50 to 1000 Volts C U R R E N T-1.0 Ampere FEATURES This series is UL recognized under component index, file number E54214 Plastic material used carries Underwriters Laboratory flammability recognition 94V-0

125OC

Abstract: DF10S 005-S
Contextual Info: DF005S THRU DF10S MINIATURE GLASS PASSIVATED SINGLE-PHASE Surface Mount Bridge Rectifiers Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere DB-S Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • Glass passivated chip junctions.

DBLS157G

Abstract: 157G DBLS 157G
Contextual Info: DBLS154G . DBLS159G Single Phase 1.5 Amp. Glass Passivated Bridge Rectifiers Dimensions in mm. CASE: THIN DF-S Current 1.5 A Voltage 400 V-1400 V • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing