16M32 Search Results

T45 12H

Abstract: memory decoding 80386dx 16 bit sl90 LIM EMS 4.0 N804CS
Contextual Info: The FlexSet PC/AT 80386DX System & Memory Controller _ SL9352 PRELIMINARY FEATURES • 100% PC/AT Compatible. • Up to 20 MHz Performance. • ISA Bus Control Logic. • • • • • • Synchronous or Asynchronous System Control Operation.

D9KG

Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
Contextual Info: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features

Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks 16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1

T45 12H

Abstract: 80386dx pipeline ROY TODD 80386DX 16 BIT Code T6S intel 80386dx 80386DX NBS16 sl9030 SL903
Contextual Info: The FlexSet PC/AT 80386DX System & Memory Controller _ SL9352 PRELIMINARY FEATURES • 100% PC/AT Compatible. • Up to 20 MHz Performance. • ISA Bus Control Logic. • Synchronous or Asynchronous System Control Operation. • Programmable Command Delays.

Lpddr2 Idd7

Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Contextual Info: 512Mb LPSDR SDRAM 16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

Contextual Info: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks 16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

358 ez 808

Abstract: G9141 MIL-C-24308 d-sub connectors Molex Micro SAS 393 EZ 639 JWT Connector RJ45 panel mount ZZL-4016-36LD 51psb micro sata connector
Contextual Info: ND3% BASE1 XXXX5216-0809-1-P 809 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:58 TS:TS date TS time CONNECTORS & ACCESSORIES Find the Newest Technologies Online FLAT/FLEX RIBBON CABLE CONNECTORS PAK20 2mm WIREMOUNT SOCKETS 0.100 x 0.100″ THREE-WALL

T67M

Abstract: ELPIDA mobile dram LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks 16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

MT46H32M16

Contextual Info: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 Banks 16M32LF – 4 Meg x 32 x 4 Banks Features • • • • • • • • • • • • • • • • • • • • Options • VDD/VDDQ

Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks 16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive

MT46H16M32

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

MT46H32M16LF

Abstract: BA0A12
Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • • • • • •

Contextual Info: a 16M32-PMCX WHITE /MICROELECTRONICS 64MByte 16Mx32 Flash PMC Memory Module advanced * FEATURES GENERAL DESCRIPTION • 6 4 M B y t e of Flash Local M e m o ry , 5V only ■ S ta n d a rd sing le w i d t h 3 2 - b it PMC M o d u le ■ PCI 2.1 S p e c ific a tio n C o m p lia n t Slave Inte rfa ce

90 ball VFBGA

Abstract: MT46H16M32LF micron ddr mt46h32m16 32M16 A12 marking diode MARKING A9 Micron MT46H32M16LF micron ddr MT46H32M16
Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 Banks 16M32LF – 4 Meg x 32 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features Figure 1: 60-Ball VFBGA Assignment

MT48H32M16LF

Abstract: 32M16 MT48H16M32
Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks 16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1

PC200

Abstract: DQ2880
Contextual Info: . Preliminary IBM16M64644HGA 16M32644HGA IBM16M64734HGA 16M32734HGA 32/64Mx64/72 1 or 2 Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 32M/64Mx72 and x64 Double Data Rate DDR SDRAM DIMM (32M X 8 SDRAMS)

lpddr2 256mb

Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

M5M416100BJ

Contextual Info: MITSUBISHI LSIs DRAM MODULE M 16M32B J-5,-6,-7/ 16M32BNJ-5,-6,-7 FAST PAGE MODE 536870912-BIT (16777216-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Double side) The M H16M 32BJ/BNJ is 16777216-word by 32-bit dynamic RAM module. That module consists o f thirty-two industry

SMD 5 PIN CODE G7

Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9
Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks 16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock

Mobile DDR SDRAM

Contextual Info: Preliminary‡ 512Mb: x16, x32 Mobile DDR SDRAM AT Addendum Features Mobile DDR SDRAM AT Addendum MT46H32M16LF – 8 Meg x 16 x 4 banks 16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

3120 32M16

Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks 16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option