09005AEF82EA3742 Search Results
09005AEF82EA3742 Datasheets Context Search
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Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive |
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512mbmt48h32m16lfmt48h16m32lf/lg09005aef82ea3742/source+1 | |
MT48H32M16LF
Abstract: 32M16 MT48H16M32
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512mbmt48h32m16lfmt48h16m32lf/lg54-ball+5 | |
SMD 5 PIN CODE G7
Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9
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512mbmt48h32m16lfmt48h16m32lf/lg09005aef82ea3742/source+11 | |
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Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1 |
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512mbmt48h32m16lfmt48h16m32lf/lg09005aef82ea3742 | |
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Contextual Info: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock |
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128mbmt48h8m16lfmt48h4m32lf09005aef82ea3742/source+1 | |
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Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive |
Original |
512mbmt48h32m16lfmt48h16m32lf/lg09005aef82ea3742/source+1 | |
MT48H32M16LF
Abstract: 512MB SDR SDRAM CHIP
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Original |
512mbmt48h32m16lfmt48h16m32lf/lg54-ball+4 |