VUO 35-12 N 0 7 Search Results

thyristor MTT 25 N 14

Abstract: E72873 13-14N02 ls 7472 25-16N02 vuo 35-12n07 36-16io1 VHF15-16 50-04N03 mtt 95 a 12 n
Contextual Info: e I Rectifier Bridges, 1~ ki L-n — —N— Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V *BMS 'd *v @ T c Type *F3U 45°C 10 ms A Vto rF ^VJM V »c K/W 85 220 0.85 m il 17 150 5.6 K/W 0.4 § E 72 873 (M) > New V VBO 13-16N02 • VBO 13-14N02 VBO 13-12N02

62-08N

Abstract: VUO 35-12 N 0 7 6n03 50-08N 6208N VUO 36-14 N 0 7 55-14N 2014n 82-08N 50-04N03
Contextual Info: HbflbEHfc, 0 0 0 1 3 7 3 730 « I X Y Rectifier Bridges, 3~ 9 1• 1 J hj w \ w * L -N — v RRM vvRMS Type Í Í £ E 72 873 (M) ► New ► VUO 30-18 N 0 3 ’ VUO 30-16N 0 3 • VUO 20 ■'6N03 • VUO 30-14N 0 3 • VUO 20-14N 03 VUO 30-12N 0 3 • VUO 20-12N 03

62-08N

Abstract: b6u 380 125-14N 110-18N 190-12N 190-08N 60-08N 11016N 80-16N01 10016n
Contextual Info: 1 ~ /3 ~ High Voltage Rectifier Modules UGB UGP UGE^ V Type V V V A ^FSM 45°C 10 ms A 300 180 120 70 RRM vRMS *dAV 0 > / UGE 0421 UG E0221 UGE 1112 UGE 3126 AY4 AY4 AY4 AY4 3200 4800 8000 24000 1125 1750 3000 9000 23/7.4 10/3.8 4.2/2.0 2.0/0.8 UGB 3132

52-16N01

Abstract: vuo 35-12n07 35-16N07 36-16N07 35-12N07 vuo 50-08N03 30-08N03 34-14N01 52-12N01 35-14N07
Contextual Info: 1 ~ / 3 ~ High Voltage Rectifier Modules vRMS ^dAV *FSM / V m£2 1.7 2.55 4.25 12 - 16 90 215 1800 - - - V V A 45°C 10 ms A UGE 0421 AY4 UGE0221 AY4 UGE 1112 AY4 UGE 3126 AY4 3200 4800 8000 24000 1125 1750 3000 9000 23/7.4 10/3.8 4.2/2.0 2.0/0.8 300

full bridge igbt induction heating generator

Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Contextual Info: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

50no3

Abstract: ixys vuo 52 input id VUO 190-08NO7 VVZ24 100-16no 70no7 8614n vvz 175 fast recovery epitaxial diode FRED module bridge INVERTER 500 W SMPS
Contextual Info: 3~ Rectifier Bridges Contents A 1 2 3 4 5 6 Page VUO 16-.NO1 VUO 22-.NO1 VUO 25-.NO8 VUO 28-.NO8 VUO 36-.NO8 VUO 35-.NO7 VUO 34-.NO1 VUO 30-.NO3 VUO 52-.NO1 VUO 50-.NO3 VUO 55-.NO7 VUO 62-.NO7 VUO 68-.NO7 VUO 70-.NO7 VUO 60-.NO3 VUO 80-.NO1

14n03

Abstract: VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07
Contextual Info: 3~ Rectifier Bridges, B6U Type ^IhJC PSM ► New A -C 45°C 10 ms A 50 130 4.5 46 0.75 120° sine 100 0.8 40 130 3.1 0.516 (120° sine) 300 0.8 15 130 2.5 0.42 (120° sine) 250 400 440 500 575 800 1400 1600 1800 250 400 440 500 575 800 1200 1400 1600 1800

Contextual Info: Three Phase Rectifier Bridges V RSM V RRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Sym bol VUO 16 I dAVM v ¥ 4/5 T yp e r* VUO VUO VUO VUO VUO T k « 90°C , module T a = 4 5 °C R>iKA = 0.5 K/W , module I^AVM module Ifsu TVJ = 45°C ; t V t =

35-18N07

Abstract: 35-16N07 35-12N07 vuo 35-12n07
Contextual Info: Three Phase Rectifier Bridge VRSM V RRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 IdAVM — 38 A VRRM =1200-1800 V Type VUO VUO VUO VUO VUO 35-06N07 35-12N07 35-14N07 35-16N07 35-18N07* * delivery time on request Symbol Test Conditions ^dA VM Tc = 85°C, module

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Contextual Info: FUJITSU HICROELECTRONICS 75 d Ë | 374^7^5 000333^ 4 3749762 FUJITSU MICROELECTRONICS 78C 03339 FU JITSU M OS M em ories • M B 8 4 1 8 A -1 2 , M B 8 4 1 8 A -1 2 L, M B 8 4 1 8 A -1 5 , M B 8 4 1 8 A -1 5 L CMOS 16,384-Bit Static Random Access Memory Daaorlptlon

15p capacitor

Contextual Info: N J QUARTZ CRYSTAL 3 7 5 Series OSCILLATOR PACKAGE OUTLINE GENERAL DESCRIPTION The NJU6375 series is a C-MOS quartz crystal oscilla­ tor which consists of an oscillation amplifier and a 3-state output buffer. This series are classed into six versions A, B. C and

as1012

Abstract: AS15 G LC3517A15 LC3517A-15 as15 h AS15 G IC LC3517
Contextual Info: SANYO S EMI CONDUCT OR CORP S3E J> ? tï ei 7 0 7 b 0Q10CH3 a?T I TSAJ r-^ té -2 s -n l0 /d > n n fi n u m b r . EN 23611 CMOS LSI F SANYO i LC3517A. AM. AS. AL, AML, ASL 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517A series devices are silicon-gate CMOS, static

S7116A

Abstract: s-7116A s7116A tone 7116A 1750 Hz TONE dEcoder s7116 E 13007 0 CQ 2.000 crystal oscillator
Contextual Info: S-7116A TONE GENERATOR The S-7116A is a ton e g e n e ra to r fa b rica te d using the CMOS process. It is com posed of an 11-stage program counter, an 8-stage Johnson counter, a program decoder and a resistor ladder network. • Features • Highly accurate and stable tones of both 38 frequencies ranging from 67 Hz to 250.3 Hz and 19

OZ 9938

Abstract: Color TV vertical section ICs M51496P 4433619 oscillator OZ 9938 G 36P4E M52025SP M52026SP PV60 TV50
Contextual Info: MITSUBISHI ICs TV M52025SP PAL/NTSC VIDEO CHROMA DEFLECTION DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52025SP is a semiconductor integrated circuit for video, chroma, and deflection signal processing. Combined with 1C component M 51496Pfor VIF/SIF, it realizes practical

Contextual Info: 1M x 16 SRAM MODULE molaic MS161000FKX-70/85/100/120 Issue 1.1 : April 1990 ADVANCE PRODUCT INFORMATION /" Sem iconductor Inc. 1,048,576 x 16 CMOS High Speed Static RAM Features Fast Access Times of 70/85/100/120 ns. 44 Pin DIL Package -1.9" pitch Low Power Standby 2mW typ. L suffix

Contextual Info: SAMSUNG ELECTRONICS INC 42 E ]> 71 bmM 2. OGI0 7 b l T I KM6264A/KM6264AL/KM6264ALL CMOS SRAM " T ^ e v ? 8 K x 8 B i t S t a t ic R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns (max. • Low Power Dissipation Standby (CMOS): 10/jW (typ.) L-Verslon

M52023SP

Abstract: rti sg16 sb 9v V14p 9V27 52P4B SG10 SG14 SG16
Contextual Info: MITSUBISHI ICs TV M52023SP NTSC VIDEO CHROMA DEFLECTION DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52023SP is semiconductor integrated circuit that processes video, color, and vertical/horizontal sync signals of the line. FEATURES •Equipped with delay-line contour adjustment for sharper

M51308SP

Abstract: m51346ap M51390ASP m51412sp M51346 PAL 007 A m51308 NOTES M51390 m51412
Contextual Info: M ITSU BISHI ICS A V CO M M O N M51390ASP PAL/NTSC VIDEO CH R O M A DEFLECTIO N DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51390ASP is a semiconductor integrated circuit for video, chroma, and deflection. Combined with IC M51346AP B-Y OUT d R-Y OUT E

BUZ21

Contextual Info: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE

Contextual Info: Ordering number: EN%4712| CMOS LSI LC331664M, ML-70/80/10 1 MEG 65536 words x 16 bits Pseudo-SRAM Overview Package Dimensions The LC331664 series is composed of pseudo static RAM that operate on a single 5 V pow er supply and are organized as 65536 words x 16 bits. By using memory

2SK2767-01

Contextual Info: S P E C I DEVICE NAME : TYPE NAME : SPEC. No. : F 1 C A T I O N Powe r 2 S K 2 7 67 — 0 1 F u j i This S p e c if ic a t io n DATE DRAWN CHECKED NAME APPROVED MOS F ET E l e c t r i c Co., L t d is sub ject to change without notice. Fuji Electric Cajitd

Contextual Info: 32,768 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION PRELIMINARY The TC551632J is a 524,288 bits high speed static random access m emory organized as 32,768 words by 16 b its u sing CMOS technology, and operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide high speed feature.