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    6N03 Search Results

    6N03 Datasheets (1)

    VANGUARD
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge VSE006N03MSC-G
    		VANGUARD 30V/36A N-Channel Advanced Power MOSFET with 4.2 mΩ RDS(on) at VGS=10V, 7.3 mΩ at VGS=4.5V, 48A silicon-limited current, and 192A pulse current capability in a PDFN3333 package. Original PDF
    SF Impression Pixel

    6N03 Price and Stock

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    Infineon Technologies AG ISZ056N03LF2SATMA1

    ISZ056N03LF2SATMA1
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    DigiKey () ISZ056N03LF2SATMA1 Digi-Reel 4,932 1
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    ISZ056N03LF2SATMA1 Cut Tape 4,932 1
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    Mouser Electronics ISZ056N03LF2SATMA1 4,826
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    TME ISZ056N03LF2SATMA1 5,000
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    Goford Semiconductor G16N03S

    N30V, 16A,RD<10M@10V,VTH1.0V~2.5
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    DigiKey () G16N03S Digi-Reel 3,494 1
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    onsemi NTMFD1D6N03P8

    MOSFET 2N-CH 30V 17A 8PQFN
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    DigiKey () NTMFD1D6N03P8 Digi-Reel 2,972 1
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    NTMFD1D6N03P8 Cut Tape 2,972 1
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    Mouser Electronics NTMFD1D6N03P8 2,900
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    Rochester Electronics NTMFD1D6N03P8 1,466 1
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    Flip Electronics NTMFD1D6N03P8 280,000
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    Master Electronics NTMFD1D6N03P8
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    Goford Semiconductor G36N03K

    N30V,36A,RD<8.5M@10V,VTH1.0V~2.2
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    DigiKey () G36N03K Digi-Reel 2,470 1
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    G36N03K Cut Tape 2,470 1
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    Infineon Technologies AG IAUTN15S6N038ATMA1

    MOSFET_(120V 300V)
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    DigiKey () IAUTN15S6N038ATMA1 Cut Tape 1,994 1
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    Avnet Americas IAUTN15S6N038ATMA1 Tape & Reel 18 Weeks 2,000
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    Mouser Electronics IAUTN15S6N038ATMA1 3,942
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    EBV Elektronik IAUTN15S6N038ATMA1 19 Weeks 2,000
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    6N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6n03

    Abstract: ZXM66N03N8 ZXM66N03N8TA
    Contextual Info: 6N03N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=30V; RDS(ON)=0.015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		ZXM66N03N8 ZXM66N03N8TA 6n03 ZXM66N03N8 ZXM66N03N8TA PDF

    62-08N

    Abstract: VUO 35-12 N 0 7 6n03 50-08N 6208N VUO 36-14 N 0 7 55-14N 2014n 82-08N 50-04N03
    Contextual Info: HbflbEHfc, 0 0 0 1 3 7 3 730 « I X Y Rectifier Bridges, 3~ 9 1• 1 J hj w \ w * L -N — v RRM vvRMS Type Í Í £ E 72 873 (M) ► New ► VUO 30-18 N 0 3 ’ VUO 30-16N 0 3 • VUO 20 ■'6N03 • VUO 30-14N 0 3 • VUO 20-14N 03 VUO 30-12N 0 3 • VUO 20-12N 03


    OCR Scan     		30-16N 30-14N 20-14N82-08N 105-18N 105-16N 105-14N07 105-12N 62-08N VUO 35-12 N 0 7 6n03 50-08N 6208N VUO 36-14 N 0 7 55-14N 2014n 82-08N 50-04N03 PDF

    6n03

    Abstract: ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC
    Contextual Info: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-30V; RDS(ON)=0.025 D=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC 6n03 ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC PDF

    DRM1X12

    Abstract: 6n03
    Contextual Info: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 MMHMaTropHbie noBopoTHbie nepeKnronaTenM Ha nnaT y MMHMaTropHwe nepeKTironaTejiM AMaMeTpoM 19,4 m m . Pecypc : m m h . 15000 nepeKnroneHMM Yron noBopoTa Ha oflHy no3MU,Mro 30°. f lw a M e ip ocm :A = 6 m m


    OCR Scan     		no3Mumo30 130MAAC/DC 25MOm flMana30H DRM1X12 n03MUMM DRM1X12 6n03 PDF

    6n03

    Abstract: N02 Transistor rf MOSFET 4546 amp 4546
    Contextual Info: 19-1232; Rev 0; 6/97 V M y iX IV M _General Description .Features The M A X 4545/M AX4546/M AX4547 are low -voltage T-switches designed for switching RF and video signals from DC to 300M H z in 50£2 and 75Q systems. The MAX4545 contains four normally open single-pole/singlethrow SPST switches. The MAX4546 contains two dual


    OCR Scan     		4545/M AX4546/M AX4547 MAX4545 MAX4546 MAX4547 -80dB 10MHz. X4546CPE MAX4546CSE 6n03 N02 Transistor rf MOSFET 4546 amp 4546 PDF