VHE240 Search Results

Contextual Info: VHE2403 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage0.8 @I(FM) (A) (Test Condition)4.0 @Temp. (øC) (Test Condition)100õ

Contextual Info: VHE2405 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.95 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25õ

Contextual Info: VHE2407 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.75 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)100õ

VHE2401

Contextual Info: VHE2401 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.90 @I(FM) (A) (Test Condition)4.0 @Temp. (øC) (Test Condition)25õ

Contextual Info: VHE2406 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.95 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25õ

VHE2402

Contextual Info: VHE2402 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.90 @I(FM) (A) (Test Condition)4.0 @Temp. (øC) (Test Condition)25õ

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

KD 605

Abstract: QDD1370 VHE2405 VHE2406 VHE2407 VHE2408
Contextual Info: nicRosEni coRP/ m i c r o SbE D • hllSRD? DDDlBb'i 732 ■ HÛL / 1 ^ 2 3 -0 1 MICRO QUALITY / S E M IC O N D U C TO R . INC 20 Amp Epitaxial Center Tapped High Efficiency Rectifiers 300 To 600 Volt VRRM Low Thermal Resistance Low Leakage High Surge Capability

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

D041

Abstract: UF130 UF140 UF150 UF4004 UF4004GP VHE230 VHE240 VHE250
Contextual Info: Ultra Fast Recovery Rectifiers UF130 - UF150 j: : Dim. Inches Minimum A B C D .081 1.10 .160 .028 M illim e te r Maximum Minimum 2.057 27.94 4.064 .711 .107 -.205 .034 Maximum Notes 2.718 Dia. 5.207 .864 Dia. - PLASTIC D041 Repetitive Peak Microsemi

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

VHE2406

Contextual Info: MICRO QUALITY / SE M ICO ND UC TO R , INC. 20 Amp Epitaxial Center Tapped High Efficiency Rectifiers 300 To 600 Volt VRRM Low Thermal Resistance Low Leakage High Surge Capability Ultra Fast Switching Speeds Glass Passivated LTR. A B C D E F G H 1 J K L M N

CTX12S

Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

varo diode

Abstract: 1n1157 1N1158 1N1160 1S1288 1N1159 BYY16 RM10TB MR2001 FC225S
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer 1 Max VRRM 'FSM Max A 00 (A) (V) VF IF @ IR Test (A) 25 °C @ (A) VR IR Test 00 T T2 @ Test (A) (°C) Op«r Package Style Max (°C) General-Purpose, lo >= 10 A . . . .5 . . .10 . . .15

BYT01-200

Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
Contextual Info: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected