VFBGA PACKAGE Search Results

VFBGA

Abstract: BV48A BV36A
Contextual Info: Package Diagram VFBGA 36-Lead VFBGA 6 x 8 x 1 mm BV36A 51-85149-* 1 Package Diagram 48-Lead VFBGA (6 x 8 x 1 mm) BV48A 51-85150-* 2

VFBGA

Contextual Info: Plastic Packages for Integrated Circuits Very Thin, Fine Pitch, Plastic Ball Grid Array Package VFBGA V81.5x5A D A1 CORNER 81 BALL VERY THIN, FINE PITCH, PLASTIC BALL GRID ARRAY PACKAGE (VFBGA) B A SYMBOL E (4x) 0.10 C TOP VIEW MIN NOMINAL MAX NOTES A 0.78

VFBGA

Contextual Info: Plastic Packages for Integrated Circuits Very Thin, Fine Pitch, Plastic Ball Grid Array Package VFBGA V49.4x4 A D 49 BALL VERY THIN, FINE PITCH, PLASTIC BALL GRID ARRAY PACKAGE (VFBGA) B A1 CORNER SYMBOL E 0.10 C (4x) TOP VIEW MIN NOMINAL MAX NOTES A 0.78

VFBGA 120

Abstract: VFBGA package tray tray 23X23 10x14 239.2 AN 7823 chippac tray 8X14 vFBGA* 96 bALL
Contextual Info: FBGA-SD Fine Pitch Ball Grid Array - Stacked Die • FBGA-SD: Laminate substrate based enabling 2 & 4 layers of routing flexibility • FBGA-T-SD: Single metal layer tape based substrate with dense routing & good electrical performance • Available in 1.4mm LFBGA-SD , 1.2mm (TFBGASD/TFBGA-T-SD), 1.0mm (VFBGA-SD/VFBGA-TSD) & 0.80mm (WFBGA-SD) maximum package

mt29f4g16abchc

Abstract: 63-ball Micron NAND 8Gb SLC MT29F4G16A MT29F4G MT29F4G16AB MT29F4G16ABC
Contextual Info: MT Login Sign up for Access Home > Products > NAND Flash > NAND Flash Part Catalog > MT29F4G16ABCHC 4Gb Mass Storage : MT29F4G16ABCHC RSS part feed: Density: 4Gb Part Status: Production RoHS: Yes Depth: 256Mb Width: x16 Voltage: 1.8V Package: VFBGA Pin Count: 63-ball

CSR BC212

Abstract: MDR741F CSR BLUECORE VIRTUAL MACHINE CSR BlueCore 4 Application Program Interface BlueCore 3 csr bluetooth csr BC02 BlueCore 2 External casira casira csr crystal trim kit BC212015ADN-E4
Contextual Info: Product Data Sheet Device Features BlueCore 2-External Low power 1.8V operation TM Small footprint in 96-Ball VFBGA Package 6x6mm Single Chip Bluetooth System Fully qualified Bluetooth component Full speed class 2 Bluetooth operation with full 7 slave piconet support

vFBGA* 96 bALL

Abstract: Amkor Wafer level mold compound amkor cabga thermal resistance BGA 256 PACKAGE thermal resistance Amkor Technology CABGA CTBGA MO-195 BGA PACKAGE thermal resistance amkor cabga
Contextual Info: LAMINATE data sheet CABGA/CTBGA/CVBGA Features: ChipArray Packages: ChipArray® BGA CABGA / LFBGA Thin ChipArray® BGA (CTBGA / TFBGA) Very Thin ChipArray® BGA (CVBGA / VFBGA) Amkor’s ChipArray® packages are laminatebased Ball Grid Array (BGA) packages that are

962n

Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

SR52

Abstract: FY618 SR-52
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages

Contextual Info: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W2MW16PAFA MT45W1MW16PAFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size

Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for

JESD51-9

Abstract: VFBGA package tray AN 7823 JESD51-2 vFBGA* 96 bALL WFBGA lfbga Encapsulation thermal resistance TRAY 15X15 tfBGA PACKAGE thermal resistance tray vfbga
Contextual Info: FBGA Fine Pitch Ball Grid Array • Array molded, cost effective, space saving package solution • Available in 1.40mm LFBGA , 1.20mm (TFBGA), and 1.00mm (VFBGA), 0.80mm (WFBGA) and 0.55mm (UFBGA) maximum thickness • Laminate substrate based package which enables 2 and 4 layers of

Contextual Info: USB3290 Small Footprint Hi-Speed USB 2.0 Device PHY with UTMI Interface PRODUCT FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ Data Brief Available in a 40 ball lead-free RoHS compliant 4 x 4 x 0.9mm VFBGA package Interface compliant with the UTMI specification

FX109

Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

Contextual Info: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns

FX110

Abstract: FX108
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero

Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

MT48LC4M32B2P

Abstract: marking 6a2 smd 6A 1176
Contextual Info: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)