BV48A Search Results

VFBGA

Abstract: BV48A BV36A
Contextual Info: Package Diagram VFBGA 36-Lead VFBGA 6 x 8 x 1 mm BV36A 51-85149-* 1 Package Diagram 48-Lead VFBGA (6 x 8 x 1 mm) BV48A 51-85150-* 2

WCMC4016V9B-55

Contextual Info: WCMC4016V9B ADVANCE INFORMATION 4Mb 256K x 16 Pseudo Static RAM Features HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High

CYK128K16SCCB

Contextual Info: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device

Contextual Info: CY81U032X16A7A MoBL3 PRELIMINARY 32M 2M x 16 SRAM Features (OE HIGH), or during a write operation (CE LOW and WE LOW). • Very high speed: 70 ns • Advanced low-power MoBL architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • • •

14027

Abstract: BV48A WCMC1616V9X WCMC1616V9X-FI70
Contextual Info: ADVANCE INFORMATION WCMC1616V9X 1Mb x 16 Pseudo Static RAM Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX

WCMC2016V9B-55

Abstract: z1012
Contextual Info: WCMC2016V9B 2-Mbit 128K x 16 Pseudo Static RAM Features can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

Contextual Info: CY62177V25 MoBL3 PRELIMINARY 32M MoBL3 SRAM Features are disabled OE HIGH , or during a Write operation (CE LOW and WE LOW). • Advanced low-power MoBL Architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • • • • • Writing to the device is accomplished by taking Chip Enable

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in

CY62167DV30L-55ZI

Abstract: CY62167DV30
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed

ultra fine pitch BGA

Abstract: CY62147CV25 CY62147CV30 CY62147CV33 CY62147V
Contextual Info: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

CYK128K16SCCB

Contextual Info: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low-power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device

CY62137CV18

Abstract: 1105
Contextual Info: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a

CY62136CV

Abstract: CY62136CV30 CY62136CV33 CY62136V
Contextual Info: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

Contextual Info: CY62147DV18 MoBL2 PRELIMINARY 4 Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable

Contextual Info: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device

Contextual Info: CYK256K16MCCB MoBL3 PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both

CY81U016X16A7A

Contextual Info: CY81U016X16A7A MoBL3 PRELIMINARY 16M 1M x 16 SRAM Features (OE HIGH), or during a write operation (CE LOW and WE LOW). • Very high speed: 70 ns • Advanced low-power MoBL architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • •

CY62157CV18

Abstract: CY62157DV20
Contextual Info: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed

Contextual Info: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1011CV33 is a high performance complementary

CY62126BV

Abstract: CY62126DV30 CY62126DV30L
Contextual Info: 26DV30 ADVANCE INFORMATION CY62126DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when

Contextual Info: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Functional Description Features The CY7C1011CV33 is a high performance complementary metal oxide semiconductor (CMOS) static RAM organized as 131,072 words by 16 bits. This device has an automatic power

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or

CY62126BV

Abstract: CY62126DV30 CY62126DV30L
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing

Contextual Info: CY62126DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX