CY62126DV30 Search Results

CY62126DV30L

Abstract: CY62126DV30LL CY62126BV CY62126DV30 CY62126DV30LL-55ZXI
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

BV48A

Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not

Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

CY62126BV

Abstract: CY62126DV30 CY62126DV30L
Contextual Info: 26DV30 ADVANCE INFORMATION CY62126DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when

CY62126BV

Abstract: CY62126DV30 CY62126DV30L
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing

Contextual Info: CY62126DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

AN1064

Abstract: CY62126DV30 CY62126EV30
Contextual Info: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Features • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive: –40 °C to +125 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62126DV30 ■

CY62126BV

Abstract: CY62126DV30 CY62126DV30L CY62126DV30LL
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not

TSOP 48 thermal resistance junction to case

Contextual Info: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • High speed: 45 ns • Wide voltage range: 2.2V–3.6V • Pin-compatible with CY62126DV30 • Ultra-low standby power — Typical standby current: 1 µA — Maximum standby current: 4 µA

CY62126BV

Abstract: CY62126DV30 CY62126DV30L CY62126DV30LL
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE

CY62126BV

Abstract: CY62126DV30 CY62126DV30L BV48
Contextual Info: CY62126DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.85 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

Contextual Info: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Features • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive: –40 °C to +125 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62126DV30 ■

Contextual Info: CY62126DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

AN1384

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

Contextual Info: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Functional Description [1] Features • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current.

HM628100

Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C