R1LV1616 Search Results

RENESAS tft application notes

Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV1616HSA-4SI

Abstract: A17A R1LV1616HSA-5SI R1LV1616HSA-4LI
Contextual Info: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0195-0100Z Rev. 1.00 Apr.22.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process

0.4mm pitch BGA

Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

52PTG

Abstract: R1LV1616R R1LV1616R Series uTSOP
Contextual Info: R1LV1616R Series REJ03C0101-0100Z Rev.1.00 2004.04.13 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV1616HBG-4SI

Abstract: R1LV1616HBG-5SI R1LV1616HBG-I
Contextual Info: R1LV1616HBG-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0263-0100 Rev.1.00 Sep.21.2005 Description The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup

A17a

Abstract: R1LV1616HSA-4SI R1LV1616HSA-4LI R1LV1616HSA-5SI REJ03C0195-0101
Contextual Info: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit / 2-Mword × 8-bit REJ03C0195-0101 Rev.1.01 Nov.18.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by

R1LV1616RBA-5SI

Abstract: R1LV1616R R1LV1616RBA uTSOP
Contextual Info: R1LV1616RBA-5SI 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0340-0001 Rev.0.01 2007.10.31 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

52-pin uTSOP

Abstract: 52-pin TSOP
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0201Z Rev.2.01 2005.03.22 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: Preliminary This product is under development and its specification might be changed without any notice. R1LV1616R Series REJ03C0101-0002Z Rev.0.02 2003.10.24 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R1LV1616R

Abstract: R1LV1616RBG-5S R1LV1616RSA-5S R1LV1616R Series R1LV1616
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

A18E

Abstract: R1LV1616RSD-7SR FDC000 R1LV
Contextual Info: APPLICATION NOTE H8SX Family Access to the External Address Space in Single-chip Mode Introduction Register setting etc. are required for the H8SX MCU to use the external address space in single-chip mode. This sample application describes access to SRAM that is connected in the external address space when the MCU has

HM2V8100TTI5SE

Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
Contextual Info: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

K4S641632K-UC75

Abstract: h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0
Contextual Info: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Cluster Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in cluster transfer mode.

h8sx

Abstract: R1LV1616RSD-7SR K4S641632K-UC75
Contextual Info: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Repeat Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in repeat transfer mode.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

K6X8016T3B-UF55

Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
Contextual Info: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

CY62148E

Abstract: R1LP0108ESA-7SR
Contextual Info: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.

RILP0108ESP-xSR

Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
Contextual Info: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.

R1LV1616R

Abstract: R1LV1616RBA R1LV1616RBA-5SI
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid