R1LV Search Results

RENESAS tft application notes

Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV0408D

Abstract: R1LV0408DSB-7L R1LV0408DSA
Contextual Info: R1LV0408D Series 4M SRAM 512-kword x 8-bit REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,

Contextual Info: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized

Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV0808ASB-5Si

Abstract: R1LV08 r1lv0808 R1LV0808ASB 44P3F
Contextual Info: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV1616HSA-4SI

Abstract: A17A R1LV1616HSA-5SI R1LV1616HSA-4LI
Contextual Info: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0195-0100Z Rev. 1.00 Apr.22.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process

Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV0208BSA 2Mb Advanced LPSRAM 256k word x 8bit R10DS0050EJ0100 Rev.1.00 2011.03.30 Description The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262,144-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density,

R1LV0416csb-7

Contextual Info: R1LV0416C-I Series Wide Temperature Range Version 4 M SRAM 256-kword x 16-bit REJ03C0105-0100Z Rev. 1.00 Aug.05.2003 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process

0.4mm pitch BGA

Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV0216BSB 2Mb Advanced LPSRAM 128k word x 16bit R10DS0051EJ0100 Rev.1.00 2011.03.30 Description The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,

R1LV0414DSB-5SI

Abstract: R1LV0414D R1LV0414DSB-7LI
Contextual Info: R1LV0414D Series 4M SRAM 256-kword x 16-bit REJ03C0312-0100 Rev.1.00 May.24.2007 Description The R1LV0414D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance 0.15µm CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low

R1LV0416DSB5si

Abstract: R1LV0416DSB-5SI
Contextual Info: R1LV0416D Series 4M SRAM 256-kword x 16-bit REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power

R1LV0416DSB

Contextual Info: R1LV0416D Series 4M SRAM 256-kword x 16-bit REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power

Contextual Info: R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0100 Rev.1.00 2009.05.07 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

52PTG

Abstract: R1LV1616R R1LV1616R Series uTSOP
Contextual Info: R1LV1616R Series REJ03C0101-0100Z Rev.1.00 2004.04.13 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

r1lv0808

Abstract: R1LV0808ASB-5SI
Contextual Info: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV0816ASA –5SI, 7SI R1LV0816ASA -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0395-0001 Rev.1.00 2009.12.08 Description The R1LV0816ASA is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV0816ASA is

48P3R

Abstract: 52PTG R1LV3216R R1LV3216RSA-5S R1LV3216RSA-7S R1LV3216RSD-5S
Contextual Info: Preliminary R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0001 Preliminary Rev.0.01 2008.03.24 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

Contextual Info: R1LV0208BSA 2Mb Advanced LPSRAM 256k word x 8bit R10DS0050EJ0100 Rev.1.00 2011.03.30 Description The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262,144-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density,

Contextual Info: R1LV0408D Series 4M SRAM 512-kword x 8-bit REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,

R1LV0416DBG-5SI

Abstract: PTSB0044GA-A R1LV0416D R1LV0416DBG-7LI R1LV0416DSB-5SI R1LV0416DSB-7LI
Contextual Info: R1LV0416D Series 4M SRAM 256-kword x 16-bit REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power

R1LV0408C-I

Abstract: R1LV0408CSA-5SI R1LV0408CSA-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSP-5SI R1LV0408CSP-7LI
Contextual Info: R1LV0408C-I Series Wide Temperature Range Version 4M SRAM 512-kword x 8-bit REJ03C0098-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process