44P3F Search Results

44P3F

Contextual Info: JEITA Package Code P-TSOP 2 44-10.16x18.41-0.80 RENESAS Code PTSB0044GD-B Previous Code 44P3F-B MASS[Typ.] 0.4g c 1 F NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. *1 E HE 22 Z Z1 23 44 Detail G

R1LV0808ASB-5Si

Abstract: R1LV08 r1lv0808 R1LV0808ASB 44P3F
Contextual Info: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV0816ASB

Abstract: nec 44pin R1LV0816A R1LV0816ASB-5SI R1LV0816ASB-5S
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ic tlp 759

Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Contextual Info: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.

Contextual Info: R1LV0216BSB 2Mb Advanced LPSRAM 128k word x 16bit R10DS0051EJ0100 Rev.1.00 2011.03.30 Description The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,

r1lv0808

Abstract: R1LV0808ASB-5SI
Contextual Info: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV0816ASB-5SI

Abstract: R1LV0816A
Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV0216BSB 2Mb Advanced LPSRAM 128k word x 16bit R10DS0051EJ0100 Rev.1.00 2011.03.30 Description The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,

R1LV0816ASB

Abstract: R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI
Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

MTE3216H-32P2M-A

Abstract: PRSP0032DA-A PTSB0044GA-A 48P3R PTSA0032KA-B 1895 ic TE322 32P3H- E
Contextual Info: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B A 254 330 N 100 100

Contextual Info:   R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

r1lv0808

Abstract: r1lv0808asb-5si
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid