48P3R Search Results

48P3R-B

Contextual Info: JEITA Package Code P-TSOP 1 48-12x18.4-0.50 RENESAS Code PTSA0048KA-A Previous Code 48P3R-B MASS[Typ.] 0.5g HD *2 D 48 *3 1 bp Index mark e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.

48P3R-B

Abstract: 48pin TSOP 48P3R
Contextual Info: 48P3R-B EIAJ Package Code TSOP 48-P-1220-0.50 Plastic 48pin 12✕20mm TSOP JEDEC Code – Weight(g) Lead Material Alloy 42 e MD HD b2 e D 48 1 I2 E y Recommended Mount Pad b Symbol 24 25 A F A1 c A2 L1 A A1 A2 b c D E e HD L L1 y L Detail F b2 I2 MD Dimension in Millimeters

48P3R

Contextual Info: 48P3R-C JEDEC Code – Weight g Lead Material Alloy 42 MD e EIAJ Package Code TSOP 48-P-1220-0.50 Plastic 48pin 12✕20mm TSOP( ) HD e b2 D 48 1 I2 Recommended Mount Pad E y b Symbol 24 25 A F A1 c A2 L1 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD Dimension in Millimeters

48P3R

Abstract: D483
Contextual Info: JEITA Package Code P-TSOP 1 48-12x18.4-0.50 RENESAS Code PTSA0048KA-B Previous Code 48P3R-C MASS[Typ.] 0.5g HD 1 D 48 *3 b p *2 Index mark *1 E y S e NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.

RENESAS tft application notes

Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

BA RV

Abstract: code lock circuit A1D14 RV80
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

M6M80011AL

Abstract: m6m80011 M6M80021FP 48P3R-B M6M80041P M5M28FB800VP-12 M6M80011AFP
Contextual Info: O R IE S • F L A S H MEMORIES CONTINUED Memory capacity Memory Configuration Power supply vottage Max. access «m e . Remarks Typ. power dissipation (mW) T w » No. (ml 51 2K X 1 6/ 1Mx8 ÍBGO) V cc = 2.7 to 3 .6 V V pp = 5 ± 0 .5 V (Dual power supply)

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

R1LV1616HSA-4SI

Abstract: A17A R1LV1616HSA-5SI R1LV1616HSA-4LI
Contextual Info: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0195-0100Z Rev. 1.00 Apr.22.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process

R1LV1616R

Abstract: R1LV1616RBG-5S R1LV1616RSA-5S R1LV1616R Series R1LV1616
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RV-80

Abstract: U150D
Contextual Info: MITSUBISHI LSIs M5M29FB/T800FP ,VP,R V-80,-10,-12 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION T he MITSUBISHI M5M 29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CM OS boot block Flash M emories suitable for

100MHZ

Abstract: IC PACKAGE ELECTRICAL CHARACTERISTIC LCR 24p2n-a 136P6S-C
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES IC PACKAGE ELECTRICAL CHARACTERISTIC 6.2 IC PACKAGE ELECTRICAL CHARACTERISTICS Tables 1, 2 and 3 show electrical characteristics of packages of various types. They are called LCR values, which include Ls, Lm, Co, Cm,

ic tlp 759

Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Contextual Info: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.

800H

Abstract: M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11
Contextual Info: MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS 271,299,072 BITS CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities

R1WV6416R

Abstract: 32MB SRAM 48P3R 52PTG 52-pin uTSOP 52-pin TSOP
Contextual Info: Preliminary R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0001 Preliminary Rev.0.01 2008.03.24 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

0.4mm pitch BGA

Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

WD04

Abstract: 24Blocks
Contextual Info: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO

Contextual Info: R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0100 Rev.1.00 2009.05.07 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

3.3kOhm

Contextual Info: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO

Contextual Info: LDESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the

48P3R

Abstract: 52PTG R1LV3216R R1LV3216RSA-5S R1LV3216RSA-7S R1LV3216RSD-5S
Contextual Info: Preliminary R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0001 Preliminary Rev.0.01 2008.03.24 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.