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48BALLS Datasheets Context Search
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RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
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r1lv1616rwordx16bitrej03c0101-0300z16-mbit+7 | |
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Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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r1lv1616rwordx16bitrej03c0101-0400z16-mbit+3 | |
R1LV1616R
Abstract: R1LV1616RBG-5S R1LV1616RSA-5S R1LV1616R Series R1LV1616
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r1lv1616rr1lv1616rbg-5sr1lv1616rsa-5sr1lv1616r series+1 | |
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Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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r1lv0816abg16bitrej03c0393-0100288-words+2 | |
DB82Contextual Info: System LED Drivers for Mobile Phones 7x17 Max. Dot Matrix LED Display Driver BD26503GUL ●Description BD26503GUL is “Matrix LED Driver” that is the most suitable for the cellular phone. It can control 7x17(119 dot) LED Matrix by internal 7-channel PMOS SWs and 17-channel LED drivers. |
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bd26503gul17-channelvcsp50l3db82 | |
0.4mm pitch BGA
Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
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r1lv1616rwordx16bitrej03c0101-0400z16-mbit+8 | |
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Contextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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v3216rwordx16bitrej03c0215-0300zr1wv3216r+4 | |
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Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N16D1618LPA Advance Information 512K x 16 Bits × 2 Banks Low Power Synchronous DRAM DESCRIPTION These N16D1618LPA are low power 16,777,216 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 |
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n16d1618lpa | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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52PTG
Abstract: R1LV1616R R1LV1616R Series uTSOP
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r1lv1616rrej03c0101-0100zwordx16bit16-mbit+6 | |
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Contextual Info: System LED Drivers for Mobile Phones 7x17 Max. Dot Matrix LED Display Driver BD26503GUL ●Description BD26503GUL is “Matrix LED Driver” that is the most suitable for the cellular phone. It can control 7x17(119 dot) LED Matrix by internal 7-channel PMOS SWs and 17-channel LED drivers. |
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bd26503gul17-channelvcsp50l3r1102a | |
R1LV1616R
Abstract: R1LV1616RBA R1LV1616RBA-5SI
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r1lv1616rr1lv1616rbar1lv1616rba-5si | |
R1LV1616RBA-5SI
Abstract: R1LV1616R R1LV1616RBA uTSOP
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r1lv1616rba-5siwordx16bitrej03c0340-0001r1lv1616r+6 | |
52-pin uTSOP
Abstract: 52-pin TSOP
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r1lv1616rwordx16bitrej03c0101-0201z16-mbit+5 | |
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52-pin uTSOP
Abstract: uTSOP 52PTG R1WV3216R 0300Z
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52-pin utsoputsop52ptgr1wv3216r+1 | |
R1LV1616
Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
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r1lv0816abg16bitrej03c0393-0100288-words+13 | |
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Contextual Info: MITSUBISHI LSIs Y PRELIMINAR M5M29GB/T008/801AWG M5M29GB/T008/801AWG ecification. ange. is not a final sp Notice : This etric limits are subject to ch Some param 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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m5m29gb/t008/801awg608-bit576-word288-word+2 | |
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Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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r1lv1616rwordx16bitrej03c0101-0400z16-mbit+3 | |
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Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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r1lv0816abg16bitrej03c0393-0100288-words+2 | |
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Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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r1lv0816abg16bitrej03c0393-0100288-words+2 | |
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Contextual Info: Preliminary This product is under development and its specification might be changed without any notice. R1LV1616R Series REJ03C0101-0002Z Rev.0.02 2003.10.24 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, |
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r1lv1616rwordx16bitrej03c0101-0002z16-mbit+3 | |
S1D14F50
Abstract: S2D19600D00B S2D19600 s1d15e0 S1D13U11F00A jpeg encoder vhdl code sgs 601 gas sensor S2D19600 EPSON S1D15722 S1D13521
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16-bit32-bits1d14f50s2d19600d00b+8 | |
52PTG
Abstract: R1LA1616RBG-7SI R1LA1616RBG-8SI R1LA1616RSD-7SI R1LA1616RSD-8SI
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r1la1616rrej03c0100-0002zwordx16bit16-mbit+8 | |
MAKING A10 BGA
Abstract: 52PTG 52-pin uTSOP R1WV3216R
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v3216rrej03c0215-0100zwordx16bitr1wv3216r+7 | |