BS616UV2019 Search Results

BGA-48-0608

Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI
Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V y Ultra low power consumption : VCC = 2.0V

Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V

BS616UV2019

Abstract: BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI
Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V

BS616UV2019DC

Abstract: BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current

BGA-48-0608

Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48
Contextual Info: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

HM628100

Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA