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    BS616UV2019DC Search Results

    BS616UV2019DC Datasheets (8)

    Brilliance Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BS616UV2019DC
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9
    BS616UV2019DC-10
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9
    BS616UV2019DC85
    		Brilliance Semiconductor Ultra Low Power CMOS SRAM 128K x 16 bit Original PDF 171.66KB 11
    BS616UV2019DC-85
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9
    BS616UV2019DCG10
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9
    BS616UV2019DCG85
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9
    BS616UV2019DCP10
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9
    BS616UV2019DCP85
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF 270.88KB 9

    BS616UV2019DC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BS616UV2019DC

    Abstract: BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI
    Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current


    Original     		100nsbs616uv2019x8/x16tsop1-48pin+9r0201-bs616uv2019bs616uv2019dcbs616uv2019dibs616uv2019tcbs616uv2019titsop1-48bga-48-0608bs616uv2019acbs616uv2019ai PDF

    BGA-48-0608

    Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI
    Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V y Ultra low power consumption : VCC = 2.0V


    Original     		bs616uv2019100nsx8/x16r0201-bs616uv2019+6bga-48-0608bs616uv2019acbs616uv2019aibs616uv2019dcbs616uv2019tcbs616uv2019ti PDF

    Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V


    Original     		bs616uv2019100nsx8/x16r0201-bs616uv2019 PDF

    BGA-48-0608

    Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48
    Contextual Info: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current


    Original     		100nsbs616uv2019x8/x16tsop1-48pin+9r0201-bs616uv2019bga-48-0608bs616uv2019acbs616uv2019aibs616uv2019dcbs616uv2019dibs616uv2019tcbs616uv2019titsop1-48 PDF

    BS616UV2019

    Abstract: BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI
    Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V


    Original     		bs616uv2019100nsx8/x16r0201-bs616uv2019+5bs616uv2019acbs616uv2019aibs616uv2019dcbs616uv2019tcbs616uv2019ti PDF