BS616UV2019AI Search Results

BS616UV2019AI Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BS616UV2019AI		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9
BS616UV2019AI-10		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9
BS616UV2019AI-85		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9
BS616UV2019AIG10		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9
BS616UV2019AIG85		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9
BS616UV2019AIP10		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9
BS616UV2019AIP85		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit	Original	PDF	270.88KB	9

BS616UV2019AI Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BS616UV2019DC Abstract: BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current	Original	100ns BS616UV2019 x8/x16 TSOP1-48PIN R0201-BS616UV2019 BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI	PDF
BGA-48-0608 Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V y Ultra low power consumption : VCC = 2.0V	Original	BS616UV2019 100ns x8/x16 R0201-BS616UV2019 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI	PDF
Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V	Original	BS616UV2019 100ns x8/x16 R0201-BS616UV2019	PDF
BGA-48-0608 Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 Contextual Info: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current	Original	100ns BS616UV2019 x8/x16 TSOP1-48PIN R0201-BS616UV2019 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48	PDF
BS616UV2019 Abstract: BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI Contextual Info: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V	Original	BS616UV2019 100ns x8/x16 R0201-BS616UV2019 BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI	PDF