CY62157C Search Results

CY62157CV18

Contextual Info: CY62157CV18 MoBL2 512K x 16 Static RAM Features The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

Contextual Info: 47V CY62157CV25/30/33 ADVANCE INFORMATION MoBL 512K x 16 Static RAM Features BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write

CY62157CV25

Abstract: CY62157CV30 CY62157CV33
Contextual Info: CY62157CV25/30/33 MoBL 512K x 16 Static RAM Features reducing power consumption by more than 99% when deselected CE1 HIGH or CE2 LOW or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or

CY62157CV18

Contextual Info: CY62157CV18 MoBL2 512K x 16 Static RAM Features The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

CY62157CV25

Abstract: CY62157CV30 CY62157CV33
Contextual Info: CY62157CV25/30/33 512K x 16 Static RAM Features MoBL in portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into

Contextual Info: PRELIMINARY CY62157CV18 MoBL2 512K x 16 Static RAM ed CE1 HIGH or CE2 LOW . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW).

Contextual Info: CY62157CV18 MoBL2 512K x 16 Static RAM Features deselected CE1HIGH or CE2 LOW , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). • Low voltage range: — CY62157CV18: 1.65V–1.95V

CY62157CV30

Abstract: CY62157CV33
Contextual Info: CY62157CV30/33 512K x 16 Static RAM Features significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE1 HIGH or CE2 LOW or both BLE and

CY62157CV18

Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA BV48A
Contextual Info: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax

CY62157CV25

Abstract: CY62157CV30 CY62157CV33
Contextual Info: CY62157CV25/30/33 512K x 16 Static RAM Features MoBL in portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into

CY62157

Abstract: CY62157CV30 CY62157CV33
Contextual Info: CY62157CV30/33 512K x 16 Static RAM Features significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE1 HIGH or CE2 LOW or both BLE and

Contextual Info: 47V CY62157CV25/30/33 ADVANCE INFORMATION MoBL 512K x 16 Static RAM Features BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write

CY62157CV18

Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA
Contextual Info: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax

Contextual Info: 47V CY62157CV25/30/33 ADVANCE INFORMATION MoBLTM 512K x 16 Static RAM Features and BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

CY62157CV18

Abstract: CY62157DV20
Contextual Info: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or

Contextual Info: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV
Contextual Info: CY62157DV MoBL ADVANCE INFORMATION 8M 512K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

am29f010b-70ef

Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
Contextual Info: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA