09005AEF80EC6F79 Search Results

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

micron memory sram

Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ

Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ

MT45W8MW16BGX-7013LWT

Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc