128MB_ Search Results

IBM "embedded dram"

Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Contextual Info: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of

micron lpddr

Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
Contextual Info: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

s11 stopping compound

Abstract: DEF01
Contextual Info: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

09005aef8091e66d

Abstract: MT48LC16M8A2BB
Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

Contextual Info: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free

Contextual Info: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be

MT48LC4M32B2P

Abstract: marking 6a2 smd 6A 1176
Contextual Info: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)

elpida lpddr2

Abstract: Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2
Contextual Info: 128Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 8 Meg x 16 2 Meg x 16 x 4 banks – 4 Meg x 32 (1 Meg x 32 x 4 banks)

micron vccp

Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
Contextual Info: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ

mt46

Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = 1.7–1.95V, VDDQ = 1.7–1.95V

MT48LC8M16A2B4

Abstract: MT48LC16M8A2BB PC133 registered reference design
Contextual Info: Preliminary‡ 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free

Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive

Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ

micron marking MT48LC8M16A2B4

Abstract: MT48LC16M8A2BB
Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options Marking • Configurations – 32 Meg x 4 8 Meg x 4 x 4 banks – 16 Meg x 8 (4 Meg x 8 x 4 banks)

MT45W8MW16BGX-7013LWT

Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC

8M16

Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
Contextual Info: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive