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SMD 5 PIN CODE G7

Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9
Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive

Contextual Info: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock

MT48H4M32

Abstract: MT48H4M32LF 8M16 MT48H8M16LF 4M32 Compound
Contextual Info: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration

Contextual Info: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock

8M16

Abstract: MT48H4M32
Contextual Info: 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration