09005AEF80BE1FBD Search Results

TCO 706

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA • • • • • • • • Single device supports asynchronous, page, and burst

Contextual Info: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site:

PX3541

Abstract: PX3551 Burst CellularRAM Memory PW245 T2025
Contextual Info: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.

Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

PX245

Abstract: PX2511 pw251 BCR150
Contextual Info: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.

MT45W4MW16B

Abstract: MT45W4MW16BFB-708LWT
Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16B* *Note: Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/

Contextual Info: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC

DEVICE MARKING CODE table

Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages

MT45W4MW16BFB-708LWT

Contextual Info: x16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC