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    UPF2 Search Results

    UPF2 Datasheets (42)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPF200-AA
    Universal Microelectronics AC/DC POWER SUPPLY SEXET OUT 12V 21A 200W Original PDF 215.61KB 1
    UPF2010
    Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 149.89KB 9
    UPF2010
    Cree Ldmos Fets in Class ab Operation 1800 MHZ Cellular Original PDF 234.52KB 12
    UPF2010-178
    Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 234.52KB 12
    UPF2010F
    Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 390.36KB 14
    UPF2010F
    Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 234.52KB 12
    UPF2010P
    Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 234.52KB 12
    UPF2010P
    Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 390.36KB 14
    UPF2012
    Cree Ldmos Fets in Class ab Operation 1800 MHZ Cellular Original PDF 164.4KB 6
    UPF20120
    Cree 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 175.33KB 9
    UPF2012-178
    Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 164.39KB 6
    UPF2012F
    Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 164.39KB 6
    UPF2012P
    Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 164.39KB 6
    UPF2030
    Cree 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 148.18KB 9
    UPF2030
    Cree 30W 2GHz 26V Broadband RF Power N-channel Enhancement-mode Lateral Dmos Original PDF 185.51KB 11
    UPF2030
    Cree LDMOS FETs in Class AB Operation 1900 MHz Cellular Original PDF 243.12KB 11
    UPF2030F
    Cree FET Transistor, 30W, 2GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 185.5KB 11
    UPF2030P
    Cree FET Transistor, 30W, 2GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 185.5KB 11
    UPF2050
    Cree 50W PEP, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 157.22KB 9
    UPF2060
    Cree 60W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 157.97KB 9
    SF Impression Pixel

    UPF2 Price and Stock

    TE Connectivity

    TE Connectivity UPF25B250RV

    UPF25 0.1% 5PPM 250R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics UPF25B250RV 551
    • 1 -
    • 10 $3.13
    • 100 $2.93
    • 1000 $2.73
    • 10000 $2.56
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    Verical () UPF25B250RV 550 20
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    • 100 $3.45
    • 1000 $3.28
    • 10000 $3.28
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    UPF25B250RV 200 12
    • 1 -
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    • 100 $5.16
    • 1000 $5.16
    • 10000 $5.16
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    Avnet Americas UPF25B250RV Box 18 Weeks, 3 Days 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.30
    • 10000 $2.63
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    Newark () UPF25B250RV Bulk 9 1
    • 1 $9.28
    • 10 $5.90
    • 100 $4.64
    • 1000 $3.97
    • 10000 $3.89
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    UPF25B250RV Bulk 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.87
    • 10000 $4.09
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    Onlinecomponents.com UPF25B250RV 551
    • 1 -
    • 10 $3.13
    • 100 $2.93
    • 1000 $2.73
    • 10000 $2.56
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    Quest Components UPF25B250RV 160
    • 1 $12.86
    • 10 $12.86
    • 100 $7.93
    • 1000 $7.07
    • 10000 $7.07
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    Avnet Abacus UPF25B250RV 20 Weeks 200
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    TE Connectivity UPF25B250RV 983 1
    • 1 $9.41
    • 10 $9.03
    • 100 $7.90
    • 1000 $7.90
    • 10000 $7.90
    Buy Now

    TE Connectivity UPF25B350RV

    The UPF25B350RV is a high-precision metal film leaded resistor with a 350 Ω resistance ±0.1% tolerance and a 1/4W power rating.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics UPF25B350RV 200
    • 1 -
    • 10 $7.27
    • 100 $4.48
    • 1000 $3.56
    • 10000 $3.54
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    Avnet Americas UPF25B350RV Box 18 Weeks, 3 Days 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.31
    • 10000 $3.16
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    Newark () UPF25B350RV Bulk 200 1
    • 1 $8.89
    • 10 $5.88
    • 100 $4.62
    • 1000 $3.79
    • 10000 $3.71
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    UPF25B350RV Bulk 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.87
    • 10000 $4.09
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    Onlinecomponents.com UPF25B350RV 200
    • 1 -
    • 10 $7.27
    • 100 $4.48
    • 1000 $3.56
    • 10000 $3.54
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    Avnet Abacus UPF25B350RV 20 Weeks 200
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    TE Connectivity UPF25B120RV

    Resistor 120 Ohm ± 0.1% 250 mW Axial Leaded Metal Film High Precision
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics UPF25B120RV 200
    • 1 -
    • 10 $5.21
    • 100 $3.93
    • 1000 $3.30
    • 10000 $3.28
    Buy Now
    Avnet Americas UPF25B120RV Box 18 Weeks, 3 Days 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.30
    • 10000 $3.16
    Buy Now
    Newark () UPF25B120RV Bulk 7 1
    • 1 $8.89
    • 10 $5.81
    • 100 $4.57
    • 1000 $3.79
    • 10000 $3.71
    Buy Now
    UPF25B120RV Bulk 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.87
    • 10000 $4.09
    Buy Now
    Onlinecomponents.com UPF25B120RV 200
    • 1 -
    • 10 $5.21
    • 100 $3.93
    • 1000 $3.30
    • 10000 $3.28
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    Avnet Abacus UPF25B120RV 20 Weeks 200
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    TE Connectivity UPF25B120RV 500 1
    • 1 $9.41
    • 10 $9.03
    • 100 $7.90
    • 1000 $7.90
    • 10000 $7.90
    Buy Now

    TE Connectivity UPF25B50RV

    The UPF25B50RV is a high-precision metal film leaded resistor with a 1/4W power rating 50 Ω resistance ±0.1% tolerance and a TCR of ±5 PPM/°C.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics UPF25B50RV 112
    • 1 -
    • 10 $3.11
    • 100 $2.91
    • 1000 $2.70
    • 10000 $2.53
    Buy Now
    Avnet Americas UPF25B50RV Box 18 Weeks, 3 Days 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.30
    • 10000 $2.63
    Buy Now
    Newark UPF25B50RV Bulk 218 1
    • 1 $9.42
    • 10 $6.26
    • 100 $4.51
    • 1000 $4.03
    • 10000 $3.95
    Buy Now
    Onlinecomponents.com UPF25B50RV 112
    • 1 -
    • 10 $3.11
    • 100 $2.91
    • 1000 $2.70
    • 10000 $2.53
    Buy Now
    Avnet Abacus UPF25B50RV 20 Weeks 200
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    Vyrian UPF25B50RV 6,007
    • 1 -
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    TE Connectivity UPF25B100KV

    UPF25 0.1% 5PPM 100K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics UPF25B100KV 80
    • 1 -
    • 10 $3.18
    • 100 $2.84
    • 1000 $2.66
    • 10000 $2.35
    Buy Now
    Verical UPF25B100KV 80 20
    • 1 -
    • 10 -
    • 100 $3.64
    • 1000 $3.64
    • 10000 $3.64
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    Onlinecomponents.com UPF25B100KV 80
    • 1 -
    • 10 $3.18
    • 100 $2.84
    • 1000 $2.66
    • 10000 $2.35
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    Avnet Abacus UPF25B100KV 100
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    UPF2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J64-1

    Abstract: UPF20120 ultrarf J296 J6-41 J641
    Contextual Info: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum


    Original
    upf2012030dbcj64-1ultrarf+3j296j6-41j641 PDF

    J406

    Abstract: J248 J425 ultrarf UPF2245 J242
    Contextual Info: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,


    Original
    upf224530dbcj406j248+3j425ultrarfj242 PDF

    diode C531

    Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
    Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier


    Original
    upf21060mrf21060diode c531c531 diode+5c531ultrarf10ufmmbta64f217 PDF

    UPF200-AA

    Abstract: power supply 12v 10a input 230v ac UMEC CISPR22 IEC1000-3-2 POWER SUPPLY 220V AC TO 12v 359006 UMEC upf200-aa CISPR-22 50/UMEC upf200-aa
    Contextual Info: UPF200-AA 200W 1U Size Single Power Supply Meet IEC1000-3-2 Harmonic Regulation Universal AC Input Voltage UL, CUL, TUV, CE, CB approved. Meet FCC Class B , CISPR22 Class B Protection on OVP,OPP Short Protection Latch OFF MTBF > 100,000 hours APPLICATION:


    Original
    upf200-aaiec1000-3-2cispr22ac90v+9100mm190mmpower supply 12v 10a input 230v acumecpower supply 220v ac to 12v359006umec upf200-aacispr-2250/umec upf200-aa PDF

    UPF2030

    Abstract: ultrarf
    Contextual Info: URFDB Sec 09_2030 11/3/99 11:09 AM Page 9-1 UPF2030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA,


    Original
    upf203030dbc225maultrarf PDF

    UPF2010F

    Abstract: ultrarf UPF2010 UPF2010P
    Contextual Info: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original
    upf201030dbcupf2010fupf2010p+1ultrarf PDF

    F1840

    Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
    Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original
    upf201230dbcupf2012fupf2012p+5f1840cree microwavecree rfupf2012-178package type 440109 PDF

    UPF250-AA

    Abstract: POWER SUPPLY 220V AC TO 12v UMEC CISPR22 IEC1000-3-2 12V to 220v ac 5A
    Contextual Info: UPF250-AA 250W 1U Size Single Power Supply Meet IEC1000-3-2 Harmonic Regulation Universal AC Input Voltage UL, CUL, TUV, CE, CB approved. Meet FCC Class B , CISPR22 Class B Protection on OVP,OPP Short Protection Latch OFF MTBF > 100,000 hours APPLICATION:


    Original
    upf250-aaiec1000-3-2cispr22100mm+4205mmpower supply 220v ac to 12vumec12v to 220v ac 5a PDF

    ultrarf

    Abstract: 10UF MMBTA64 MRF21090 UPF21090 irl 2807 300GP 82-5022
    Contextual Info: UPF21090 90W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.


    Original
    upf21090mrf21090ultrarf10uf+4mmbta64irl 2807300gp82-5022 PDF

    J377

    Abstract: J380 J373 J207 ultrarf UPF2425 J362 J2-21 J209 J369
    Contextual Info: URFDB Sec 15_2425 11/3/99 11:27 AM Page 15-1 UPF2425 25W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,


    Original
    upf242530dbcj377j380+7j373j207ultrarfj362j2-21j209j369 PDF

    UPF2010

    Abstract: 1103AM package type 440109
    Contextual Info: URFDB Sec 08_2010 11/3/99 11:03 AM Page 8-1 UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA,


    Original
    upf201030dbc1103ampackage type 440109 PDF

    Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original
    upf201230dbcupf2012fupf2012p+144017r PDF

    Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original
    upf201230dbcupf2012fupf2012p PDF

    UPF2010-178

    Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
    Contextual Info: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original
    upf201030dbcupf2010fupf2010p+9upf20ap100uf125mwupf2010-178cree microwave upf2010ac dc 10w47pfj033package type 440109 PDF

    UPF2030F

    Abstract: Cree Microwave cree rf UPF2030 UPF2030P
    Contextual Info: UPF2030 30W, 2 GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. It is rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier


    Original
    upf203030dbcupf2030fupf2030p+2cree microwavecree rf PDF

    J457

    Abstract: J463 ultrarf UPF2445 j149 J476 164TM f2390 j142 J147
    Contextual Info: URFDB Sec 16_2445 11/3/99 11:29 AM Page 16-1 UPF2445 45W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,


    Original
    upf244530dbcj457j463+7ultrarfj149j476164tmf2390j142j147 PDF

    UPF2030F

    Abstract: UPF2030 UPF2030P
    Contextual Info: UPF2030 30W, 2 GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. It is rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier


    Original
    upf203030dbcupf2030fupf2030p PDF

    ultrarf

    Abstract: UPF2060 J351 118 gpe
    Contextual Info: URFDB Sec 11_2060 11/3/99 11:17 AM Page 11-1 UPF2060 60W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS 11 Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,


    Original
    upf206028dbcvolta830ultrarf+2j351118 gpe PDF

    J243

    Abstract: j182 J464 ultrarf UPF2050 j453 j247
    Contextual Info: URFDB Sec 10_2050 11/3/99 11:13 AM Page 10-1 UPF2050 50W PEP, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum peak envelope output power of 50W, it is ideal for


    Original
    upf205030dbcj243j182+4j464ultrarfj453j247 PDF

    J427

    Abstract: ultrarf UPF2225 J437 J417
    Contextual Info: URFDB Sec 13_2225 11/3/99 11:21 AM Page 13-1 UPF2225 25W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,


    Original
    upf222530dbcj427ultrarf+2j437j417 PDF

    MRF21030

    Abstract: UPF21030
    Contextual Info: UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power


    Original
    upf21030mrf21030 PDF

    HP4432B

    Abstract: UPF21010
    Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers


    Original
    upf21010volt55hp4432b PDF

    MRF21030

    Abstract: ultrarf UPF21030
    Contextual Info: UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier


    Original
    upf21030mrf21030100khz270ma+1ultrarf PDF

    TA8190

    Contextual Info: T O SH IB A TC9263AF TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC9263AF CD SINGLE-CHIP PROCESSOR The TC9263AF is a single chip processor for sync separation protection/synchronization, EFM dem odulation, error correction / interpolation,


    OCR Scan
    tc9263af91f/ta2035f/ta2065ffp100-p-1420-0+1ta8190 PDF