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HP4432B Abstract: UPF21010 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	upf21010 volt55 hp4432b	PDF

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HP4432B

Abstract: UPF21010
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

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upf21010 volt55 hp4432b

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