UPF21010 Search Results

UPF21010 Datasheets (4)

Filter by Manufacturer

Cree

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF21010	Cree	10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	86.24KB	6
UPF21010	Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular	Original	PDF	92.83KB	6
UPF21010F	Cree	FET Transistor, 10W, 2.17GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	92.82KB	6
UPF21010P	Cree	FET Transistor, 10W, 2.17GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	92.82KB	6

UPF21010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPF21010F Abstract: UPF21010P UPF21010 f2140 f1214 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf21010 upf21010f acp-10mhz 10mhz +3upf21010p f2140 f1214	PDF
HP4432B Abstract: UPF21010 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	upf21010 volt55 hp4432b	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF

Catalog Datasheet

Type

Document Tags

PDF

UPF21010F

Abstract: UPF21010P UPF21010 f2140 f1214
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.

Original

upf21010 upf21010f acp-10mhz 10mhz +3

PDF

HP4432B

Abstract: UPF21010
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

Original

upf21010 volt55 hp4432b

PDF

semiconductors cross reference

Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30

Original

blf1043 upf1010 blf3g21-30 upf1030 +14

PDF