UPF21010P Search Results

UPF21010P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF21010P		Cree	FET Transistor, 10W, 2.17GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	92.82KB	6

UPF21010P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPF21010F Abstract: UPF21010P UPF21010 f2140 f1214 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.	Original	UPF21010 UPF21010F UPF21010 UPF21010, ACP-10MHz 10MHz UPF21010F UPF21010P f2140 f1214	PDF

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UPF21010F

Abstract: UPF21010P UPF21010 f2140 f1214
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.

Original

UPF21010 UPF21010F UPF21010 UPF21010, ACP-10MHz 10MHz UPF21010F UPF21010P f2140 f1214

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