UPF21010 Search Results

UPF21010 Datasheets (4)

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Cree

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF21010	Cree	10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	86.24KB	6
UPF21010	Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular	Original	PDF	92.83KB	6
UPF21010F	Cree	FET Transistor, 10W, 2.17GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	92.82KB	6
UPF21010P	Cree	FET Transistor, 10W, 2.17GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	92.82KB	6

UPF21010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPF21010F Abstract: UPF21010P UPF21010 f2140 f1214 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.	Original	UPF21010 UPF21010F UPF21010 UPF21010, ACP-10MHz 10MHz UPF21010F UPF21010P f2140 f1214	PDF
HP4432B Abstract: UPF21010 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	UPF21010 Volt55 HP4432B UPF21010	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b	PDF

Catalog Datasheet

Type

Document Tags

PDF

UPF21010F

Abstract: UPF21010P UPF21010 f2140 f1214
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.

Original

UPF21010 UPF21010F UPF21010 UPF21010, ACP-10MHz 10MHz UPF21010F UPF21010P f2140 f1214

PDF

HP4432B

Abstract: UPF21010
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

Original

UPF21010 Volt55 HP4432B UPF21010

PDF

semiconductors cross reference

Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30

Original

BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b

PDF