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UPF21010F Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF21010F		Cree	FET Transistor, 10W, 2.17GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	92.82KB	6

UPF21010F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPF21010F Abstract: UPF21010P UPF21010 f2140 f1214 Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf21010 upf21010f acp-10mhz 10mhz +3upf21010p f2140 f1214	PDF

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UPF21010F

Abstract: UPF21010P UPF21010 f2140 f1214
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and MultiCarrier Power Amplifiers in Class A or AB operation.

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upf21010 upf21010f acp-10mhz 10mhz +3

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