UPF2012 Search Results

UPF2012 Datasheets (5)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF2012		Cree	Ldmos Fets in Class ab Operation 1800 MHZ Cellular	Original	PDF	164.4KB	6
UPF20120		Cree	120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	175.33KB	9
UPF2012-178		Cree	FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	164.39KB	6
UPF2012F		Cree	FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	164.39KB	6
UPF2012P		Cree	FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	164.39KB	6

UPF2012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J64-1 Abstract: UPF20120 ultrarf J296 J6-41 J641 Contextual Info: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum	Original	upf20120 30dbc j64-1 ultrarf +3j296 j6-41 j641	PDF
F1840 Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109 Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf2012 30dbc upf2012f upf2012p +5f1840 cree microwave cree rf upf2012-178 package type 440109	PDF
Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf2012 30dbc upf2012f upf2012p +144017r	PDF
Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf2012 30dbc upf2012f upf2012p	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF