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    UPA801 Datasheets (20)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPA801
    		NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF 80.97KB 12
    uPA801
    		NEC Semiconductor Selection Guide Original PDF 3MB 399
    UPA801T
    		California Eastern Laboratories Npn Silicon High Frequency Original PDF 177.82KB 8
    UPA801T
    		NEC 6-pin small MM high-frequency double transistor Original PDF 80.96KB 12
    UPA801T
    		NEC NPN silicon high frequency transistor. Original PDF 38.96KB 7
    uPA801T
    		NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) Original PDF 47.49KB 6
    UPA801T-A
    		California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 4.5GHZ 6SMT Original PDF 7
    UPA801TC
    		NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF 80.96KB 12
    uPA801TC
    		NEC NPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MI Original PDF 80.96KB 12
    UPA801TC-T1
    		NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF 80.96KB 12
    uPA801TC-T1
    		NEC NPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MI Original PDF 80.96KB 12
    UPA801TF
    		NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF 15.08KB 1
    UPA801TF
    		NEC 6-pin small MM high-frequency double transistor Original PDF 80.96KB 12
    uPA801TFB
    		NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-pin 2 Elements) Mini Mold Original PDF 47.49KB 6
    uPA801TFB-T1
    		NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-pin 2 Elements) Mini Mold Original PDF 47.49KB 6
    uPA801TGB
    		NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-pin 2 Elements) Mini Mold Original PDF 47.49KB 6
    UPA801T-T1
    		NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF 38.95KB 7
    UPA801T-T1
    		NEC 6-pin small MM high-frequency double transistor Original PDF 80.96KB 12
    UPA801T-T1-A
    		California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 4.5GHZ 6SMT Original PDF 7
    UPA801T-T1-A
    		California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF 177.84KB 8
    SF Impression Pixel

    UPA801 Price and Stock

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    Renesas Electronics Corporation UPA801T-T1-A

    Trans GP BJT NPN 12V 0.1A 6-Pin Mini-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () UPA801T-T1-A 15,000 616
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    UPA801T-T1-A 14,444 616
    • 1 -
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    UPA801T-T1-A 1,675 616
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    Rochester Electronics UPA801T-T1-A 31,119 1
    • 1 -
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    • 100 $0.54
    • 1000 $0.45
    • 10000 $0.40
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    NEC Electronics Group UPA801T-T1

    Trans RF BJT NPN 12V 0.1A 6-Pin Mini-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPA801T-T1 5,375
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    Quest Components () UPA801T-T1 4,300
    • 1 $0.91
    • 10 $0.91
    • 100 $0.91
    • 1000 $0.36
    • 10000 $0.32
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    UPA801T-T1 3,635
    • 1 $0.90
    • 10 $0.90
    • 100 $0.90
    • 1000 $0.38
    • 10000 $0.33
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    Renesas Electronics Corporation UPA801T-T1

    TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,100MA I(C),SOT-363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPA801T-T1 2,413
    • 1 $0.90
    • 10 $0.90
    • 100 $0.90
    • 1000 $0.38
    • 10000 $0.33
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    UPA801 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		upa801tne856100ma24-hour+8transistor bf 444lb 1639651 lemamp 827 578 3 pindatasheet of bjt 547transistor bf 422 npns21eupa801t-t1 PDF

    UPA802T

    Abstract: BD304 NE02132
    Contextual Info: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		upa800tupa801tupa802tupa806t+7upa807tupa808tupa809tupa810tot-363bd304ne02132 PDF

    NE856

    Abstract: S21E UPA801TF
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06


    Original     		upa801tfot-363ne856upa801tf-t1+224-hours21e PDF

    NE856

    Abstract: S21E UPA801TC UPA801TC-T1
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA801TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		upa801tcot-363ne856upa801tc-t1+224-hours21e PDF

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


    OCR Scan     		ne856100maupa801tupa801t-t1+5transistor nf 842transistor c 5578 btransistor c 5578transistor 5578transistor 534 PDF

    sm 9142

    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The/xPA801T has built-in 2 low -voltage tran sistors w hich are designed PACKAGE DRAWINGS (U n it: m m)


    OCR Scan     		upa801tthe/xpa801t2sc4226sm 9142 PDF

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		upa801tne856100ma24-hour+5lb 1639transistor bf 444transistor 4341transistor bf 258transistor bf 236 PDF

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		upa801tne856100malb 1639+7bf 830 transistorupa801t-t1-as21eupa801t-t1of bjt 547transistor bf 507651 lem PDF

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


    OCR Scan     		ne856100maupa801tupa801t-t1+424-hourtransistor nf 842d 843 transistortransistor su 312 PDF

    8003* transistor

    Abstract: npn dual emitter RF Transistor UPA801T "ultra low noise" NPN transistor NE856 S21E UPA801T-T1 97 transistor
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz


    Original     		upa801tne856100maupa801t-t1+624-hour8003* transistornpn dual emitter rf transistorultra low noise" npn transistors21e97 transistor PDF

    marking R24

    Abstract: MARKING 702 6pin ic 2SC4226 uPA801T UA80 S2L 92 IC 8219 842 ic
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRA N SISTO R ¿¿PA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R WITH BUILT-IN 6-PIN 2 ELEM ENTS MINI MOLD The ,uPA801T has b uilt-in 2 low -voltage transistors w hich are designed PACKAGE DRAWINGS


    OCR Scan     		upa801t2sc4226marking r24marking 702 6pin ic+4ua80s2l 92ic 8219842 ic PDF

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		upa800tupa801tupa802tupa806t+15upa807tupa808tupa809tupa810tupa811tupa812tupa827tfupa833tfupa831tfsot 363175 sot363sot 153ne685dual sot363sot-363 PDF

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		an1028upa808tcascode transistor array vcoupa807t+6rf transistors with s-parametersupa802tcascode transistor arrays21eupa806ttransistor rf s-parameters PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		2013/4msmd m05 sot23ne5531ne352+4a3 smd sot-343transistor smd m05smd transistor m05transistor smd code 404 PDF

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		07/2m847indiana/kentuckyne3511s02 s2pne3512s02 s2p+8smd m05 sotsmd transistor m05s06 smdupg2162t5nne3210s01ne321000qfn2020upg2250t5n PDF

    2SC4226

    Abstract: PA801T c4226
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		pa801tpa801tvhfuhf2sc4226c4226 PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		ne68018ne680upa801tcupa808tc+16upa821tcupa826tcupa861tdupa831tcupa862tdupa835tcnec b1007t79 code markingc3206marking s16marking code c1hqfn marking t88c3h markingne02107t79 markingc3206g PDF

    EPCOS NTSC

    Abstract: GRM1555C1H1R2B LQG18HN22NJ00 GRM1555C1H4R7C NEC silicon transistor designation GRM155R71C104K GRM1885C1H101J GRM188R71H102K MAX3540 GRM1885C1H300J
    Contextual Info: 19-4164; Rev 0; 6/08 MAX3540 Evaluation Kit The MAX3540 evaluation kit EV kit simplifies the testing and evaluation of the MAX3540 NTSC, ATSC, and hybrid tuner. The EV kit is fully assembled and tested at the factory. Standard 50Ω SMA connectors are included on the EV kit for the inputs and outputs to allow


    Original     		max3540epcos ntscgrm1555c1h1r2blqg18hn22nj00+6grm1555c1h4r7cnec silicon transistor designationgrm155r71c104kgrm1885c1h101jgrm188r71h102kgrm1885c1h300j PDF

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


    Original     		ne68039ne68139ne68539ne85639+14ot-143ne68000ne68100ne85600upa862tdne894m33 tf 130nesg204619nesg2046nesg2030m042nesg2101m05ne68030ne68033ne68133 PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		10/2msmd transistor m05smd transistor code m05wy smd transistor+7upd5740ne66200transistor m05 smdupd5740t6nupg2159t6rsmd transistor m05 driver50 volts 5 amp smd sot-89 transistor PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		bb 509 varicap diodeblf6g22lon503tea6849+6bf1107 spice modelpin diode ads modelultra fast diodes sanyo catalogrf manualdiode varicap bb 112adi cmos bipolar sige PDF