U 242 SAMSUNG Search Results

1RF242

Abstract: mosfet IRF240 DIODE M4A irf240 IRF242 1rf240
Contextual Info: \ 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R Tfl DE 17Tbm4S DDOSCm 4 | - — IRF240/241/242/243 IN C 98 D 0 5 0 9 9 D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times

IRF243

Abstract: IRF240 IRF242 mosfet IRF240 IRF241
Contextual Info: 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R \ Tfl DE 17Tbm4S DDOSCm 4 | IRF240/241/242/243 IN C 98 D 0 5 0 9 9 - — D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times

IRFP240

Abstract: IRF640 SAMSUNG
Contextual Info: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re

1RF9630

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • ■ • • • TO-220 Lower R 0s ON Improved inductive ru gge d n e ss Fast sw itching tim es

KSA1182

Abstract: KSC2859
Contextual Info: SAMSUNG SEMICONDUCT OR INC KSC2859 14E D | 7^4142 OOGLI?! 1 | f.zy NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SO T-23 • Complement to KSA1182 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol ColleCtor-Base Voltage CoHector-Emftter Voltage

D F 331 TRANSISTOR

Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Contextual Info: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )

C 3311 transistor

Abstract: diode 226 T-33-11 la08a KSD5011 KSD5012 samsung tv l008A T3311
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD5011 i me d I T 'ib M m a ooo?tta 4 | NPNTHIPUfc DIFFUSED PLANAR SILIC O N TRAN SISTO R T-33-11 CO LOR TV HORIZONTALNOUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage Vcso= 1500V v ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

VGA 15 PIN to dvi-d wiring DIAGRAM

Abstract: SERVICE MANUAL samsung television samsung ba92 samsung VGA 20 PIN CABLE CONNECTION DIAGRAM usb to s-video wiring diagram SERVICE MANUAL tv samsung BA810 samsung x25 samsung service manual dvi-d wiring DIAGRAM
Contextual Info: Copyright c 2005 SAMSUNG Electronics Co.,Ltd. All rights reserved. Under the copyright laws, this manual cannot be reproduced in any form without the prior written permission of SAMSUNG Electronics Co.,Ltd. No patent liability is assumed with respect to the use

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • KM23C2100A 7*ib414E DDlbT7ö Sñfi CMOS MASK ROM 2M-Bit 256Kx8/128Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 100ns (max.)

Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance

24cxx eeprom programmer circuit diagram

Abstract: PIC18CXX2 RS-485 to usart pic interface circuit pic16f877 full instruction set fuzzy logic library pic c code keeloq decode Transponder ID 48 RC5 DECODER PIC16F877 pp d115 marking cod A2
Contextual Info: PIC18CXX2 High-Performance Microcontrollers with 10-Bit A/D High Performance RISC CPU: Device PIC18C242 * DIP, Windowed CERDIP On-Chip Program Memory On-Chip RAM EPROM # Single Word bytes (bytes) Instructions 16K 8192 512 PIC18C252 32K 16384 1536 PIC18C442

ds39026

Abstract: PIC16CXX PIC18C242 PIC18C252 PIC18C442 PIC18C452 PIC18CXX2 PIC16C7X CS-7 thermistor MPLAB-C18 keypad
Contextual Info: PIC18CXX2 High-Performance Microcontrollers with 10-Bit A/D High Performance RISC CPU: Device PIC18C242 * DIP, Windowed CERDIP On-Chip Program Memory On-Chip RAM EPROM # Single Word bytes (bytes) Instructions 16K 8192 512 PIC18C252 32K 16384 1536 PIC18C442

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC D5 DE ~ ‘ 7=322 '3 / DESCRIPTION FEATURES • 2-Way Asynchronous Communication Between Data Buses • Function, pin-out, speed and drive compatibility with 54/74LS logic family ' • Low power consumption characteristic of CMOS

Contextual Info: PIC18CXX2 Data Sheet High Performance Microcontrollers with 10-bit A/D  2001 Microchip Technology Inc. DS39026C “All rights reserved. Copyright 2001, Microchip Technology Incorporated, USA. Information contained in this publication regarding device applications and the like is intended through

PIC18f452 timer0 codes

Abstract: PIC18Fxxx PIC18F452 PWM example codes PIC18F452 Free Projects sp-300 24v samsung lcd monitor power supply circuit diagram PIC18FXX2 PIC18 example C18 codes PIC18f452 example codes PIC18 example usart
Contextual Info: PIC18FXX2 Data Sheet High Performance, Enhanced FLASH Microcontrollers with 10-Bit A/D  2001 Microchip Technology Inc. Advance Information DS39564A Note the following details of the code protection feature on PICmicro MCUs. • • • • • • The PICmicro family meets the specifications contained in the Microchip Data Sheet.

KM68257

Abstract: a12g KM68257lp km68257P u 242 samsung KM68257LP-25 SRAM SAMSUNG
Contextual Info: SAMSUNG SEMICONDUCTOR IN C 23E D • 7^ 4142 GÜDñSTb T ■ CMOS SRAM KM68257P/KM68257LP 32K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.)

PIC16F8XXA

Abstract: DS39026C IR 1836 3v PIC16C7X PIC16CXX PIC18C242 PIC18C252 PIC18C442 PIC18C452 PIC18CXX2
Contextual Info: PIC18CXX2 Data Sheet High Performance Microcontrollers with 10-bit A/D  2001 Microchip Technology Inc. DS39026C “All rights reserved. Copyright 2001, Microchip Technology Incorporated, USA. Information contained in this publication regarding device applications and the like is intended through

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC 05 K S 54A H C Í O 'Â Ô /O À 'Q KS74AHCT ' .' D eT| 7 ^ 4 1 4 5 DODblOS 5 Quad Bus Transceivers with 3-State Outputs Preliminary Specifications "~7~~ ~ "3 / DESCRIPTION FEATURES 2-Way Asynchronous Communication Between Data

Contextual Info: SAMSUNG ELECTRONICS INC T' ìbm M S DDIMSMM 4T7 •■ SMßK b4E D KMM5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • tRAC tCAC KMM5321000AV- 7 70ns 20 ns 130ns KMM5321000AV- 8

S/KMM5322200BW/BWG-6

Abstract: M53222
Contextual Info: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS

Contextual Info: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A

Contextual Info: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung

7 inch tft tv circuit diagram

Abstract: samsung TFT LCD LT104S1-101 37 pin TFT display 104S1-101 tcl tv 21 samsung 101 - hc 12 SAMSUNG lt LCD samsung d-600 tcl lcd tv power circuit diagram
Contextual Info: LT104S1-101 Specifications TFT LCD Panel D isplay August 1995, Rev. 2.0 LT 10 4 S 1-101 Samsung TFT LCD CONTENTS PAGE General Description 1. 2 Absolute Maximum Rating 3 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings 2. Optical Characteristics

notebook lcd cross reference

Contextual Info: LT104S1-101 Specifications TFT LCD Panel D isplay August 1995, Rev. 2.0 7^4142 0 0 2 ^ 0 47 3T3 • A 11 LT 10 4 S 1-101 Samsung TFT LCD CONTENTS PAGE General Description 1. 2 Absolute Maximum Rating 3 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings