T3311 Search Results

BLV98

Contextual Info: 41E D PHILIPS INTERNATIONAL • 711002h 002740b b H P H I N '' BLV98 r-33-n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 M Hz communications band.

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

hf power amplifiers 2-30 mhz

Abstract: S15-12 Scans-00115673 S15-12-2 UJ35
Contextual Info: 0182998 ACRIAN IN C ~T7 »E^DlñETIñ D DG011SD 3 f - 3 3 - // S15-12 GENERAL DESCRIPTION 15 WATTS - 12.5 VOLTS 1.5 - 30 MHZ The S15-12 is recommended for use in HF Linear amplifiers. It is linearity and ruggedness make it ideal for use in driver stages. HF COMMUNICATIONS

X 13003

Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
Contextual Info: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

.5J1

Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Contextual Info: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power

rca ta8405

Contextual Info: File Number 680 •7 ^ 3 —/ / HARRIS SEMICOND SECTOR 5bE D • 2N6477, 2N6478 4302571 0D405bl Tib H H A S Medium-Power Silicon N-P-N Transistors TERMINAL DESIGNATIONS For Intermediate Power Applications in Industrial and Commercial Equipment F L A N G E

b3a transistor

Contextual Info: ROHM CO S7 > V 40E LTD T û H fiW » OQOS^ÛS $ / I ransistors 5 ESRHM 2SD 1778 T -3 3 -il NPN 2 SS2 1 7 7 8 •f& ü >j5 ^3iill1lf f l/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • í+Jfí \f>£|I]/Dlmensions Unit : mm -¿ -ihA o N K -^

MS27719-26-1

Abstract: MS27719-27-1 T3-31231D T3-112
Contextual Info: T3 COMMERCIAL & MIL MINIATURE TOGGLES MINIATURE TOGGLES FEATURING OTTO’S UNIQUE SNAP-IN MECHANISM These miniature toggles are rugged, highly reliable switches offering positive detent action for safe switching operation. Featuring the unique OTTO snap-action switch mechanism in

Contextual Info: BDY90 BDY91 BDY92 bb53T31 0020037 2 N AHER PHILIPS/DISCRETE J 25E D r - 3 3 - a SILIC O N D IFFU SED PO W ER T R A N SIST O R S High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, switching regulators and switching control amplifiers.

Contextual Info: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier

c5129

Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz

BDY92

Abstract: BDY91 BDY90 9946 BDV91 IEC134 TO3 philips
Contextual Info: N A M E R {3 ^ 5 3 1 3 1 P H I L I P S / D Q 2 I S Q C 3 7 Q R E T BDY90 BDY91 BDY92 2 5 E 5 E J D y T - 3 3 -ÍH SILICON DIFFUSED POWER TRANSISTORS High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, • switching regulators and switching control amplifiers.

PZB16035U

Abstract: discrete transistor amplifier 2.5 ghz
Contextual Info: N AMER PHILIPS/DISCRETE □ bE D • bb53*i31 Q01S1S3 1 ■ L PZB16Ô35U r-33-it MICROWAVE POWER TRANSISTORS N-P-N transistor for use in common-base, class-B, amplifier under c.w. conditions in military and professional applications up to 1,6 GHz. Features

samsung tv

Contextual Info: IME D | 7 ^ 1 4 2 G00?fe»71 5 | N PN T R IP L E D IFFU SED P L A N A R SIL IC O N T R A N SIS T O R KSD5014 SAMS UNG S E M I C O N D U C T O R . INC T - 3 3 - 11 V CO LO R TV HORIZONTAL OUTPUT APPLICA TIO N S TO-3P F High Collector-Base Voltage V e » = 1500V

BUW86

Abstract: BUW87 BUW87A IEC134
Contextual Info: BUW86 BUW87 BUW87A DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice. bbS3T31 G Q n a i 3 5 N AMER PHI LI PS /D ISCR ET E T - 3 3 - / / ESE D SILICON DIFFUSED POWER TRANSISTORS High-speed switching npn transistors in a metal envelope intended fo r use in converters, inverters,

24v ballast

Abstract: marking 18T TR marking 18t RV3135B5X
Contextual Info: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

acrian RF POWER TRANSISTOR

Abstract: 91s Amplifier 2023-6T
Contextual Info: GENERAL 2023-16 D E S C R IP T IO N 16 WATTS - 24 VOLTS 2.0-2.3 GHz The 2023-16 is an Internally matched common base transistor providing 16 watts of RF C W output power across the 2000-2300 M Hz band. This hermetically sealed transistor Is specifically designed for telemetry

acrian motorola

Abstract: ACRIAN MPA201 RF01 acrian inc
Contextual Info: & g K B B H B B S 0182998 ACRIAN INC 17 D ESO IA S DD01D43 T □ T-33-11 iV i B k mlE If/lilife h \ G ENER AL MPA 201 D E S C R IP TIO N 0.5 WATTS 12.5 VOLTS 500 MHz The MPA-201 is an amplifier device designed for broadband performance to 500 MHz in a format suitable for stripline

K/O-187-BA

Contextual Info: N AUER PHIL IPS/DISCRETE - bbSBIBl 0 0 1 1 H 3 T 2SE D BD243; BD243A BD243B: BD243C T-3S-IJ SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in general amplifier and switching applica­ tions. P-N-P complements are BD244; 244A; 244B; and BD244C.

Contextual Info: 11 1^53=131 001=5713 0 • 25E D N AMER PHILIPS/DISCRETE BDT41;A BDT41B;C J T -3 3 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The TIP41 series is an equivalent type. P-N-P complements are BDT42 series.

Contextual Info: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl OOISIST 2 DtV tLU H M tN I UAIA PZB16040U T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. y v r - 3 3 - H M ICRO W AVE POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

D41D2

Contextual Info: HARRIS SEMICON» SECTOR 5bE D • H3ÜB271 00M077S 272 H H A S File Number 2338 D 4 1 D S6TÍ68 1 = 3 3 -/ 7 1-Ampere Silicon P-N-P Power Transistors Complementary to the D40D Series TERMINAL DESIGNATIONS Features: High free-air power dissipation • Low collector saturation voltage I-0.5V typ. @ -1A Iq ,