Q01T Search Results

JUKCT-003-01-00

Abstract: JUKCT-003-02-00
Contextual Info: DWG: JUKCT-003-01-00 64 Hand c rim p ing Type: V C - 1 2 2 Parallel action R atchet of tool release load C ontact lo c a to r in su la tio n -sto p P recisely pro file s with ground Ergonomic s o f t colour; g re e n grips Applicable term inal: HF-Q01T-0.8BS

scr tic 1060

Abstract: Diode LT 410 VD357 TIC 2460 SCR 400V 1000A 1RKT Thyristor snubber IRK.F200 50A KTF
Contextual Info: • In t G r n â t iO n S l INTERNATIONAL R E C T I F I E R S ] Rectifier FAST SCR I DIODE MÖSSMS2 Q01tiô30 MTS H I N R bSE D s e r i e s i r k . f 2 oo and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ ■ ■ ■ F ast tu rn -o ff th y ris to r

TOSHIBA 9097250

Contextual Info: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

BY588

Contextual Info: {[ N AMER P H I L I P S / D I S C R E T E SSE D • ^53131 - Q01t71t 2 BY588 T - û i- ie r BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. T he device is intended fo r use as efficiency diode in horizontal deflection circuits between base and em itter terminals

Contextual Info: TOS HIB A { D I S C R E T E / O P T O } io 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A de l'ìc m a sa 90D SEMICONDUCTOR DD i b i i a i g 16161 D T ~ ? 3 - I3 TOSHIBA GTR MODULE MG25N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.

.5J1

Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Contextual Info: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power

Contextual Info: rm mL'fim HEW LETT PACKARD Low Current Bar Code Digitizer IC Technical Data HBCC-0500 • Compatible w ith HP Bar Code Sensors -HBCC-1570- 0.013 in. 0.33 mm -H B CC -1580-0.007 in. 0.185 mm -H B CC -1590-0.005 in. 0.13 mm • Ambient Light Rejection > 100 K Lux

CQ58

Contextual Info: - » Y U H D f l l —• HYM7V64200B Z-SERIES SO DIMM 2MX64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin SOJ or TSOPli and 8-pin TSSO P 2K bit EEPROM on a 144-pin glassepoxy circuit board. Two 0.22|iF and 0.0022|_iF decoupling capacitors are mounted for each SDRAM.

Q01t

Contextual Info: S G S-THOnSON D7E D | 7 ^ 2 3 7 if* 00lb3bû 1 | 1 LOW POWER SCHOTTKY I a INTEGRATED CIRCUITS 67C 15497 D T-66-21-51 QUAD 2-PORT REGISTER DESCRIPTION The T54LS/T74LS398/399 are Quad 2-Port Regi­ sters. They are the logical equivalent of a quad 2-input multiplexer followed by a 4-bit edgetriggered register. Selection between two 4-bit in­

ML2208CCJ

Contextual Info: MICRO LI NE AR bDT341fl DOQlflTM Sflb • ML S1E D October 1990 ”T * S I - 0 7 ¡ero Linear *O I p r e l im in a r y ML2200, ML2208 12-Bit Plus Sign Data Acquisition Peripheral GENERAL DESCRIPTION FEATURES Th e M L2200 and ML2Í208 Data Acquisition Peripherals D A P ,

Contextual Info: ICS2002 Integrated Circuit Systems, Inc. Wavedec Digital Audio Codec Description Features The ICS2002 is a mixed-signal integrated circuit providing a low-cost recording and playback solution for multimedia audio applications. These applications include document annotation,

Contextual Info: DS87C530 PRELIM INARY DALLAS SEMICONDUCTOR DS87C530 EPROM Micro with Real Time Clock FEATURES PACKAGE OUTLINE • 80C52 Compatible - 8051 Instruction set - Four 8-bit I/O ports - Three 16-bit timer/counters - 256 bytes scratchpad RAM • Large On-chip Memory

Contextual Info: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith

FST 460 transistor

Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
Contextual Info: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.

HTGB

Contextual Info: W hpl HEW LETT mL'fim P A C K A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed p ulse width = 577 [isec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout

Contextual Info: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8

Contextual Info: EIE D • t iE 4^025 0 0 1 b 3 3 0 =5 ■ MITSUBISHI LSIs M 5M 482128J - 8. - 10. -12 ^ M I T S U B I S H I ME MOR Y/ AS IC 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM T-46-23-17 DESCRIPTION The Mitsubishi M5M482128J is a high speed 1048576-bit Dual Port Dynamic Memory equipped with a 128K x 8

Contextual Info: SONY _C X D 2 7 2 1 Q -1 Single-Chip Digital Signal Processor for Karaoke Description The CXD2721Q-1 is a Karaoke LSI suitable for use in video CD/LD/CD-G/CD and the like. A large capacity DRAM and AD/DA converters are built in, and a Karaoke mode providing simple surround and

sq10 amplifier

Abstract: philips sq10 amplifier
Contextual Info: ,ONY I _ C X D 2 7 2 0 Q Single-Chip Digital Signal Processor for Karaoke Description The CXD2720Q is a digital signal processor LSI for Karaoke, suitable for use in LD/CD/CD-G/video CD and the like. A large capacity DRAM and AD/DA converters are

Contextual Info: b24=lflES ' G G l b a f lT MITSUBISHI LSIs a M 5 M 4 4 2 2 5 6 J , L - 8 , - 1 0 ,- 1 2 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM M IT S U B IS H I DESCRIPTION The Mitsubishi M5M442256J,L is a high speed 1048576-bit Dual Port Dynamic Memory equipped with a 256K x 4

Contextual Info: Chapter 6 Specifications This chapter specifies the SI-64’s electrical and mechanical characteristics and is divided into the following sections: • Section 6.1, “AC Characteristics,” provides complete AC timing data. ■ Section 6.2, “Electrical Requirements,” provides operating conditions

ST chn 624

Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
Contextual Info: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568

2SD1262

Abstract: panasonic 2SD
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A • Package Dimensions Unit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Medium Speed Power Switching Complementary Pair with 2S D 1262, 2SD 1262A I*- * l.lmax. 6.5max. ■ Features • High DC cu rre n t gain hFE

transistor pcr 406

Abstract: bd489 B52BD PCR 406 TRANSISTOR PCR 406 J transistor Q01t transistor pcr 406 j r65c10
Contextual Info: 7611G73 DOnMOT 534 »RKül R65C10 R65C10 One-Chip Microcomputer Rockwell SECTION I INTRODUCTION FEATURES SUMMARY The Rockwell R65C10 microcomputer is a complete 8-bit com­ puter fabricated on a single chip using an N-well silicon gate CMOS process. The R65C10 complements an industry standard