045I2 Search Results

Contextual Info: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

YTF150

Contextual Info: 9097250 ¿Toshiba TOSHIBA 1 TT TOSHIBA {DISCRETE/OPTO} DE I TCIT72SD 0 0 1 t , 7 7 E 99D < 0 IS C R E T E / O P T O 16772 0 1 ^ 3 ^ -1 3 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 15 0 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE TECHNICAL DATA {7T-M0SIE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

TOSHIBA 9097250

Contextual Info: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.